参数资料
型号: T436416A
厂商: TM Technology, Inc.
英文描述: 4M X 16 SDRAM
中文描述: 4米× 16内存
文件页数: 27/29页
文件大小: 712K
代理商: T436416A
TE
CH
tm
Self Refresh Entry & Exit Cycle
0
1
2
T436416A
TM Technology Inc. reserves the right
P.27
to change products or specifications without notice.
Publication Date: MAY. 2003
Revision: B
C L O C K
C K E
C S
R A S
C A S
A D D R
B A
A 1 0 /A P
D Q
W E
D Q M
3
4
5
6
7
8
9
1 0
1 1
1 2
1 3
1 4
1 5
1 6
1 7
1 8
1 9
:D o n 't c a re
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
S S
* N o te 2
* N o te 1
* N o te 3
* N o te 4
* N o te 6
* N o te 7
* N o te 5
t
S S
t
R C m in
H i-z
S e lf R e fre s h E n try
S e lf R e fre s h E x it
A u to R e fre sh
H i-z
*Note : TO ENTER SELF REFRESH MODE
1.
CS
,RAS &
CAS
with CKE should be low at the same clock cycle.
2. After 1 clock cycle, all the inputs inculding the system clock can be don’t care except for CKE.
3. The device remains in self refresh mode as long as CKE stays ‘Low’.
Cf.) Once the device enters self refresh mode, minimum
t
RAS
is required before exit from self refresh.
TO EXIT SELF REFRESH MODE
4. System clock restart and be stable before returning CKE high.
5.
CS
starts from high.
6. Minimum tRC is required after CKE going high to complete self refresh exit.
7. 2K cycle of burst auto refresh is required before self refresh entry and after self refresh exit if the
system uses burst refresh.
相关PDF资料
PDF描述
T436416A-10S 4M X 16 SDRAM
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T436416A-6S 4M X 16 SDRAM
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相关代理商/技术参数
参数描述
T436416A-10S 制造商:TMT 制造商全称:TMT 功能描述:4M X 16 SDRAM
T436416A-10SG 制造商:TMT 制造商全称:TMT 功能描述:4M X 16 SDRAM
T436416A-6S 制造商:TMT 制造商全称:TMT 功能描述:4M X 16 SDRAM
T436416A-6SG 制造商:TMT 制造商全称:TMT 功能描述:4M X 16 SDRAM
T436416A-7.5S 制造商:TMT 制造商全称:TMT 功能描述:4M X 16 SDRAM