参数资料
型号: T436432B-7S
厂商: TM Technology, Inc.
英文描述: 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
中文描述: 200万× 32内存为512k × 32 x 4Banks同步DRAM
文件页数: 16/72页
文件大小: 731K
代理商: T436432B-7S
TE
CH
tm
Absolute Maximum Rating
T436432B
TM Technology Inc. reserves the right
P. 16
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A
Symbol
V
IN
, V
OUT
V
DD
, V
DDQ
T
OPR
T
STG
T
SOLDER
P
D
I
OUT
Item
Leaded Package
Lead Free Package
Unit
V
V
°
C
°
C
°
C
W
mA
Note
1
1
1
1
1
1
1
Input, Output Voltage
Power Supply Voltage
Operating Temperature
Storage Temperature
Soldering Temperature (10s)
Power Dissipation
Short Circuit Output Current
-1~4.6
- 1~4.6
0~70
- 55~150
240
260
1
50
Recommended D.C. Operating Conditions (Ta = 0~70
°
C)
Symbol
V
DD
V
DDQ
V
IH
V
IL
Parameter
Power Supply Voltage
Power Supply Voltage(for I/O Buffer)
LVTTL Input High Voltage
LVTTL Input Low Voltage
Min.
3.0
3.0
2.0
- 0.3
Typ.
3.3
3.3
-
-
Max.
3.6
3.6
V
DDQ
+ 0.3
0.8
Unit
V
V
V
V
Note
2
2
2
2
Capacitance (V
DD
= 3.3V, f = 1MHz, Ta = 25
°
C)
Symbol
C
I
C
I/O
Parameter
Min.
-
-
Max.
4.5
6.5
Unit
pF
pF
Input Capacitance
Input/Output Capacitance
Note: These parameters are periodically sampled and are not 100%
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