参数资料
型号: T436432B-7S
厂商: TM Technology, Inc.
英文描述: 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
中文描述: 200万× 32内存为512k × 32 x 4Banks同步DRAM
文件页数: 70/72页
文件大小: 731K
代理商: T436432B-7S
TE
CH
tm
Figure 24.2. Precharge Termination of a Burst
(Burst Length=8 or Full Page, CAS# Latency=2)
T436432B
TM Technology Inc. reserves the right
P. 70
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A
T0
T 1 T2
T3
T4
T5
T6
T7
T8
T9
T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
WE#
A10
A0~A9
DQM
DQ
BS0,1
t
CK2
DAx0 DAx1Ax2 DAx3
Ay2
Ay0 Ay1
Activate
Command
Bank A
Write
Command
Bank A
Precharge
Command
Bank A
Read
Command
Bank A
Precharge
Command
Bank A
Activate
Command
Bank A
RAx
RAx
RAy
CAx
RAy
CAy
Az0
Az1
Az2
Precharge Termination
of a Write Burst.
Write data is masked.
Activate
Command
Bank A
t
WR
t
RP
t
RP
RAz
CAz
High
Read
Command
BPrecharge TerminBank A
of a Read Burst
Precharge
Command
t
RP
RAz
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