参数资料
型号: T89C5115-TDSIM
厂商: Atmel
文件页数: 40/113页
文件大小: 0K
描述: IC 8051 MCU FLASH 16K 24SOIC
标准包装: 31
系列: 89C
核心处理器: 8051
芯体尺寸: 8-位
速度: 40MHz
连通性: UART/USART
外围设备: POR,PWM,WDT
输入/输出数: 20
程序存储器容量: 16KB(16K x 8)
程序存储器类型: 闪存
EEPROM 大小: 2K x 8
RAM 容量: 512 x 8
电压 - 电源 (Vcc/Vdd): 3 V ~ 5.5 V
数据转换器: A/D 8x10b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 24-SOIC(0.295",7.50mm 宽)
包装: 管件
32
AT89C5115
4128G–8051–02/08
Program/Code
Memory
The T89C5115 implement 16K Bytes of on-chip program/code memory.
The Flash memory increases EPROM and ROM functionality by in-circuit electrical era-
sure and programming. Thanks to the internal charge pump, the high voltage needed for
programming or erasing Flash cells is generated on-chip using the standard VDD volt-
age. Thus, the Flash memory can be programmed using only one voltage and allows In-
System Programming (ISP). Hardware programming mode is also available using spe-
cific programming tool.
Figure 12. Program/Code Memory Organization
Flash Memory
Architecture
T89C5115 features two on-chip Flash memories:
Flash memory FM0:
containing 16K Bytes of program memory (user space) organized into 128 bytes
pages,
Flash memory FM1:
2K Bytes for boot loader and Application Programming Interfaces (API).
The FM0 can be program by both parallel programming and Serial ISP whereas FM1
supports only parallel programming by programmers. The ISP mode is detailed in the
’In-System Programming’ section.
All Read/Write access operations on Flash memory by user application are managed by
a set of API described in the ’In-System Programming’ section.
Figure 13. Flash Memory Architecture
0000h
16K Bytes
3FFFh
Internal
Flash
3FFFh
16K Bytes
Flash Memory
FM0
0000h
Hardware Security (1 byte)
Column Latches (128 Bytes)
User Space
Extra Row (128 Bytes)
2K Bytes
Flash Memory
FM1
Boot Space
FFFFh
F800h
FM1 mapped between F800h and
FFFFh when bit ENBOOT is set in
AUXR1 register
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