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参数资料
| 型号： | TB28F800BV-T80 |
| 厂商： | INTEL CORP |
| 元件分类： | DRAM |
| 英文描述： | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 1M X 8 FLASH 5V PROM, 80 ns, PDSO44 |
| 封装： | 0.525 X 1.110 INCH, PLASTIC, SOP-44 |
| 文件页数： | 21/55页 |
| 文件大小： | 638K |
| 代理商： | TB28F800BV-T80 |
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E
3.3.2.1
2-MBIT SmartVoltage BOOT BLOCK FAMILY
21
SEE NEW DESIGN RECOMMENDATIONS
Clearing the Status Register
The WSM sets status bits 3 through 7 to
“1,” and
clears bits 6 and 7
to “0,” but cannot clear status
bits 3 through 5 to “0.” Bits 3 through 5 can only be
cleared by the controlling CPU through the use of
the Clear Status Register (50H) command, because
these bits indicate various error conditions. By
allowing the system software to control the resetting
of these bits, several operations may be performed
(such as cumulatively programming several bytes
or erasing multiple blocks in sequence) before
reading the status register to determine if an error
occurred during that series. Clear the status register
before beginning another command or sequence.
Note, again, that a Read Array command must be
issued before data can be read from the memory or
intelligent identifier.
3.3.3
PROGRAM MODE
Programming is executed using a two-write
sequence. The Program Set-Up command is written
to the CUI followed by a second write which
specifies the address and data to be programmed.
The WSM will execute a sequence of internally
timed events to:
1.
Program the desired bits of the addressed
memory word or byte.
Verify that the desired bits are sufficiently
programmed.
2.
Programming of the memory results in specific bits
within a byte or word being changed to a “0.”
If the user attempts to program “1”s, there will be no
change of the memory cell content and no error
occurs.
The status register indicates programming status:
while the program sequence is executing, bit 7 of
the status register is a “0.” The status register can
be polled by toggling either CE# or OE#. While
programming, the only valid command is Read
Status Register.
When programming is complete, the program status
bits should be checked. If the programming
operation was unsuccessful, bit 4 of the status
register is set to a “1” to indicate a Program Failure.
If bit 3 is set to a “1,” then V
PP
was not within
acceptable limits, and the WSM did not execute the
programming sequence.
The status register should be cleared before
attempting the next operation. Any CUI instruction
can follow after programming is completed;
however, reads from the memory array or intelligent
identifier cannot be accomplished until the CUI is
given the appropriate command.
3.3.4
ERASE MODE
To erase a block, write the Erase Set-Up and Erase
Confirm commands to the CUI, along with the
addresses identifying the block to be erased. These
addresses are latched internally when the Erase
Confirm command is issued. Block erasure results
in all bits within the block being set to “1.” Only one
block can be erased at a time.
The WSM will execute a sequence of internally
timed events to:
1.
2.
Program all bits within the block to “0.”
Verify that all bits within the block are
sufficiently programmed to “0.”
Erase all bits within the block to “1.”
Verify that all bits within the block are
sufficiently erased.
3.
4.
While the erase sequence is executing, bit 7 of the
status register is a “0.”
When the status register indicates that erasure is
complete, check the erase status bit to verify that
the erase operation was successful. If the erase
operation was unsuccessful, bit 5 of the status
register will be set to a “1,” indicating an Erase
Failure. If V
was not within acceptable limits after
the Erase Confirm command is issued, the WSM
will not execute an erase sequence; instead, bit 5 of
the status register is set to a “1” to indicate an
Erase Failure, and bit 3 is set to a “1” to identify that
V
PP
supply voltage was not within acceptable limits.
Clear the status register before attempting the next
operation. Any CUI instruction can follow after
erasure is completed; however, reads from the
memory array, status register, or intelligent
identifier cannot be accomplished until the CUI is
given the Read Array command.
相关PDF资料 |
PDF描述 |
|---|---|
| TB28F800BVB90 | 8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TB28F800BVT90 | 8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TB28F800CV-B80 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TB28F800CV-T60 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TB28F800CV-T80 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TB28F800BVT90 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TB28F800CV-B60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TB28F800CV-B80 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TB28F800CV-T60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TB28F800CV-T80 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
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