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参数资料
型号： TB28F800BV-T80
厂商： INTEL CORP
元件分类： DRAM
英文描述： 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
中文描述： 1M X 8 FLASH 5V PROM, 80 ns, PDSO44
封装： 0.525 X 1.110 INCH, PLASTIC, SOP-44
文件页数： 6/55页
文件大小： 638K
代理商： TB28F800BV-T80
2-MBIT SmartVoltage BOOT BLOCK FAMILY
E
6
SEE NEW DESIGN RECOMMENDATIONS
Separately erasable blocks, including a hardware-
lockable boot block (16,384 bytes), two parameter
blocks (8,192 bytes each) and main blocks (one
block of 98,304 bytes and one block of 131,072
bytes), define the boot block flash family
architecture. See Figures 7 and 8 for memory
maps. Each block can be independently erased and
programmed
100,000
temperature
or
10,000
temperature.
times
times
at
commercial
at
extended
The boot block is located at either the top (denoted
by
-T
suffix) or the bottom (
-B
suffix) of the address
map
in
order
to
microprocessor protocols for boot code location.
The
hardware-lockable
complete code security for the kernel code required
for system initialization. Locking and unlocking of
the boot block is controlled by WP# and/or RP#
(see Section 3.4 for details).
accommodate
different
boot
block
provides
The Command User Interface (CUI) serves as the
interface
between
the
microcontroller and the internal operation of the
boot block flash memory products. The internal
Write State Machine (WSM) automatically executes
the algorithms and timings necessary for program
and erase operations, including verifications,
thereby
unburdening
the
microcontroller of these tasks. The Status Register
(SR) indicates the status of the WSM and whether it
successfully completed the desired program or
erase operation.
microprocessor
or
microprocessor
or
Program and Erase Automation allows program and
erase operations to be executed using an industry-
standard two-write command sequence to the CUI.
Data programming is performed in word (28F200
family) or byte (28F200 or 28F002B families)
increments. Each byte or word in the flash memory
can be programmed independently of other memory
locations, unlike erases, which erase all locations
within a block simultaneously.
The 2-Mbit SmartVoltage boot block flash memory
family is also designed with an Automatic Power
Savings (APS) feature which minimizes system
battery current drain, allowing for very low power
designs. To provide even greater power savings,
the boot block family includes a deep power-down
mode which minimizes power consumption by
turning most of the flash memory’s circuitry off. This
mode is controlled by the RP# pin and its usage is
discussed in Section 3.5, along with other power
consumption issues.
Additionally, the RP# pin provides protection
against unwanted command writes due to invalid
system bus conditions that may occur during
system reset and power-up/down sequences. For
example, when the flash memory powers-up, it
automatically defaults to the read array mode, but
during a warm system reset, where power
continues uninterrupted to the system components,
the flash memory could remain in a non-read mode,
such as erase. Consequently, the system Reset
signal should be tied to RP# to reset the memory to
normal read mode upon activation of the Reset
signal. See Section 3.6.
The 28F200 provides both byte-wide or word-wide
input/output, which is controlled by the BYTE# pin.
Please see Table 2
and Figure 16 for a detailed
description of BYTE# operations, especially the
usage of the
DQ
15
/A
–1
pin.
The
ROM/EPROM-compatible pinout and housed in the
44-lead PSOP (Plastic Small Outline) package, the
48-lead TSOP (Thin Small Outline, 1.2 mm thick)
package and the 56-lead TSOP as shown in
Figures 4, 5 and 6, respectively. The 28F002
products are available in the 40-lead TSOP
package as shown in
Figure 3.
28F200
products
are
available
in
a
Refer to the DC Characteristics, Section 4.4
(commercial
temperature)
(extended temperature), for complete current and
voltage
specifications.
Characteristics,
Section
temperature)
and
Section
temperature), for read, write and erase performance
specifications.
and
Section
4.11
Refer
to
the
AC
4.5
(commercial
(extended
4.12
1.3
Applications
The 2-Mbit boot block flash memory family
combines
high-density,
performance, cost-effective flash memories with
blocking and hardware protection capabilities. Their
flexibility and versatility reduce costs throughout the
product life cycle. Flash memory is ideal for Just-In-
Time production flow, reducing system inventory
and costs, and eliminating component handling
during the production phase.
low-power,
high-
When your product is in the end-user’s hands, and
updates
or
feature
necessary, flash memory reduces the update costs
by allowing user-performed code changes instead
of costly product returns or technician calls.
enhancements
become
相关PDF资料
PDF描述
TB28F800BVB90 8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TB28F800BVT90 8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TB28F800CV-B80 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TB28F800CV-T60 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TB28F800CV-T80 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
相关代理商/技术参数
参数描述
TB28F800BVT90 制造商:INTEL 制造商全称:Intel Corporation 功能描述:8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TB28F800CV-B60 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TB28F800CV-B80 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TB28F800CV-T60 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TB28F800CV-T80 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
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