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| 型号： | TC1266VUATR |
| 厂商： | Microchip Technology |
| 文件页数： | 2/16页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 3.3V 200MA PCI 8MSOP |
| 标准包装： | 2,500 |
| 应用： | 转换器，PCI 外围设备卡应用 |
| 输入电压： | 4.3 V ~ 5.5 V |
| 输出数： | 1 |
| 输出电压： | 3.3V |
| 工作温度： | -5°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 8-MSOP |
| 包装： | 带卷 (TR) |
TC1266
1.0
ELECTRICAL
CHARACTERISTICS
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
Absolute Maximum Ratings*
Input Supply Voltage (V IN ).............. -0.5V to +7V (Max)
Auxiliary Supply Voltage (V AUX ) ..... -0.5V to +7V (Max)
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
LDO Output Current (I OUT )................................ 200mA
Thermal Impedance,
Junction-to-Ambient ( θ JA )............130°C/W for SOIC
ESD Rating .......................................................... 2 KV
Operating Temperature Range (T A )........ -5°C to +70°C
Storage Temperature Range (T STG ) ...-65°C to +150°C
TC1266 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: T A = +25°C, V IN = 5V, V AUX = 3.3V, I OUT = 0.1mA, C OUT = 4.7 μ F, unless otherwise noted. Boldface
type specifications apply over full operating temperature range.
Symbol
V IN
I GND
Parameter
Supply Voltage
Ground Current
Min
4.3
—
Typ
5.0
230
Max
5.5
450
Units
V
μ A
Test Conditions
V AUX = 0V
V AUX = 0V (Note 6)
—
260
500
V AUX = 3.3V (Note 6)
I VIN
V AUX
I Q(AUX)
Reverse Leakage from V AUX
Supply Voltage
Quiescent Current
—
3.0
—
-0.1
3.3
50
-1.0
3.6
70
μ A
V
μ A
V AUX = 3.6V, V IN = 0V, I OUT = 0mA
V IN = 0V, I OUT = 0mA
—
—
100
—
—
60
—
80
120
μ A
V IN = 5V, I OUT = 0mA
I VAUX
V TH(LO)
Reverse Leakage from V IN
5V Detector
—
—
-0.1
3.90
-1.0
—
μ A
V
V IN = 5,5V, V AUX = 0V, I OUT = 0mA
V IN Falling (Notes 2, 3)
Low Threshold Voltage
3.75
—
4.05
V HYST
5V Detector
—
260
—
mV
(Notes 2, 3)
Hysteresis Voltage
200
—
300
V TH(HI)
5V Detector
—
4.15
—
V
V IN Rising (Notes 2, 3)
High Threshold Voltage
4.0
—
4.30
V OUT
LDO Output Voltage
—
3.300
—
V
I OUT = 20mA
3.234
3.000
—
—
3.366
—
4.3V ≤ V IN ≤ 5.5V, 0mA ≤ I OUT ≤ 200mA
3.75V ≤ V IN ≤ 4.3 V,
0mA ≤ I OUT ≤ 200mA (Note 4)
I OUT
Output Current
200
—
—
mA
REG (LINE)
Line Regulation
—
0.05
—
%
V IN = 4.3V to 5.5V
-0.5
—
0.5
REG (LOAD)
Load Regulation
—
0.05
—
%
I OUT = 0.1mA to 200mA
-0.5
—
0.5
Note
1:
2:
3:
4:
5:
6:
Ensured by design.
See 5V Detect Thresholds, Figure 4-1.
Recommended source impedance for 5V supply: ≤ 0.25 ? . This will ensure that I OUT x R SOURCE < V HYST , thus avoiding D R toggling during
5V detect threshold transitions.
In Application Circuit, Figure 3-1.
See Timing Diagram, Figure 4-2.
Ground Current is independent of I LOAD .
DS21377B-page 2
2002 Microchip Technology Inc.
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