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| 型号： | TC1266VUATR |
| 厂商： | Microchip Technology |
| 文件页数： | 3/16页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 3.3V 200MA PCI 8MSOP |
| 标准包装： | 2,500 |
| 应用： | 转换器，PCI 外围设备卡应用 |
| 输入电压： | 4.3 V ~ 5.5 V |
| 输出数： | 1 |
| 输出电压： | 3.3V |
| 工作温度： | -5°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 8-MSOP |
| 包装： | 带卷 (TR) |
TC1266
TC1266 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: T A = +25°C, V IN = 5V, V AUX = 3.3V, I OUT = 0.1mA, C OUT = 4.7 μ F, unless otherwise noted. Boldface
type specifications apply over full operating temperature range.
Symbol
V DR
Parameter
Drive Voltage
Min
V IN - 0.2
Typ
V IN - 0.1
Max
—
Units
V
Test Conditions
4.3V ≤ V IN ≤ 5.5V, I DR = 200 μ A
V IN - 0.3
—
—
—
—
35
—
150
200
mV
V IN < V TH(LO) , I DR = 200 μ A
I DR(PK)
Peak Drive Current
7
—
—
mA
Sinking: V IN = 3.75V, V DR = 1V;
6
—
—
Sourcing: V IN = 4.3V, V IN – V DR = 2V
t DH
t DL
Drive High Delay
(Notes 1, 5)
Drive Low Delay
(Notes 1, 5)
—
—
—
—
4
—
0.6
—
—
8
1.5
3.0
μ sec
μ sec
C DR = 1.2nF, V IN ramping up,
measured from V IN = V TH(HI) to V DR = 2V
C DR = 1.2nF, V IN ramping down,
measured from V IN = V TH(LO) to V DR = 2V
Note
1:
2:
3:
4:
5:
6:
Ensured by design.
See 5V Detect Thresholds, Figure 4-1.
Recommended source impedance for 5V supply: ≤ 0.25 ? . This will ensure that I OUT x R SOURCE < V HYST , thus avoiding D R toggling during
5V detect threshold transitions.
In Application Circuit, Figure 3-1.
See Timing Diagram, Figure 4-2.
Ground Current is independent of I LOAD .
2002 Microchip Technology Inc.
DS21377B-page 3
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