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| 型号： | TC4451VOA |
| 厂商： | Microchip Technology |
| 文件页数： | 10/26页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR 12A HS 8SOIC |
| 标准包装： | 100 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 44ns |
| 电流 - 峰： | 13A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 管件 |
| 产品目录页面： | 671 (CN2011-ZH PDF) |
TC4451/TC4452
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1 .
TABLE 3-1:
PIN FUNCTION TABLE
8-Pin PDIP,
SOIC
1
2
3
4
5
6
7
8
—
—
8-Pin DFN
1
2
3
4
5
6
7
8
9
—
5-Pin TO-220
—
1
—
2
4
5
—
3
—
TAB
Symbol
V DD
INPUT
NC
GND
GND
OUTPUT
OUTPUT
V DD
EP
V DD
Description
Supply input, 4.5V to 18V
Control input, TTL/CMOS-compatible input
No connection
Ground
Ground
CMOS push-pull output
CMOS push-pull output
Supply input, 4.5V to 18V
Exposed metal pad
Metal tab is at the V DD potential
3.1
Supply Input (V DD )
3.4
Ground (GND)
The V DD input is the bias supply for the MOSFET driver
and is rated for 4.5V to 18V with respect to the ground
pin. The V DD input should be bypassed to ground with
a local ceramic capacitor. The value of the capacitor
should be chosen based on the capacitive load that is
being driven. A minimum value of 1.0 μF is suggested.
The ground pins are the return path for the bias current
and for the high peak currents that discharge the load
capacitor. The ground pins should be tied into a ground
plane or have very short traces to the bias supply
source return.
3.2
Control Input (INPUT)
3.5 Exposed Metal Pad (EP)
The exposed metal pad of the 6x5 DFN package is not
The MOSFET driver input is a high-impedance,
TTL/CMOS-compatible input. The input also has
300 mV of hysteresis between the high and low
thresholds that prevents output glitching even when the
rise and fall time of the input signal is very slow.
3.3 CMOS Push-Pull Output
(OUTPUT)
The MOSFET driver output is a low-impedance,
CMOS, push-pull style output capable of driving a
capacitive load with 12A peak currents. The MOSFET
driver output is capable of withstanding 1.5A peak
reverse currents of either polarity.
DS21987B-page 10
internally connected to any potential. Therefore, this
pad can be connected to a ground plane or other
copper plane on a Printed Circuit Board (PCB) to aid in
heat removal from the package.
3.6 Metal Tab
The metal tab of the TO-220 package is connected to
the V DD potential of the device. This connection to V DD
can be used as a current carrying path for the device.
? 2006-2012 Microchip Technology Inc.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TC4451VOA | 制造商:Microchip Technology Inc 功能描述:MOSFET Driver IC |
| TC4451VOA713 | 功能描述:功率驱动器IC 12A Sngl MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4451VPA | 功能描述:功率驱动器IC 12A Sngl MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4451VPA | 制造商:Microchip Technology Inc 功能描述:MOSFET Driver IC |
| TC4452 | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:12A High-Speed MOSFET Drivers |
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