参数资料
型号: TC4451VOA
厂商: Microchip Technology
文件页数: 4/26页
文件大小: 0K
描述: IC MOSFET DVR 12A HS 8SOIC
标准包装: 100
配置: 低端
输入类型: 反相
延迟时间: 44ns
电流 - 峰: 13A
配置数: 1
输出数: 1
电源电压: 4.5 V ~ 18 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 管件
产品目录页面: 671 (CN2011-ZH PDF)
TC4451/TC4452
1.0
ELECTRICAL
CHARACTERISTICS
? Notice: Stresses above those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the device.
These are stress ratings only and functional operation of the
Absolute Maximum Ratings ?
Supply Voltage .....................................................+20V
Input Voltage .................... (V DD + 0.3V) to (GND – 5V)
device at these or any other conditions above those indicated
in the operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Input Current (V IN > V DD ) ...................................50 mA
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, T A = +25°C with 4.5V ? V DD ? 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘ 1 ’, High Input Voltage
Logic ‘ 0 ’, Low Input Voltage
V IH
V IL
2.4
1.5
1.3
0.8
V
V
Input Current
Input Voltage
I IN
V IN
–10
–5
+10
V DD + 0.3
μA
V
0V ??? V IN ??? V DD
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Continuous Output Current
Latch-Up Protection
Withstand Reverse Current
V OH
V OL
R OH
R OL
I PK
I DC
I REV
V DD – 0.025
2.6
1.0
0.9
13
>1.5
0.025
1.5
1.5
V
V
?
?
A
A
A
DC Test
DC Test
I OUT = 10 mA, V DD = 18V
I OUT = 10 mA, V DD = 18V
V DD = 18V
10V ?? V DD ? 18V ( Note 2 , Note 3 )
Duty cycle ???? 2%, t ??? 300 μs
Switching Time ( Note 1 )
Rise Time
Fall Time
Propagation Delay Time
Propagation Delay Time
t R
t F
t D1
t D2
30
32
44
44
40
40
52
52
ns
ns
ns
ns
Figure 4-1 , C L = 15,000 pF
Figure 4-1 , C L = 15,000 pF
Figure 4-1 , C L = 15,000 pF
Figure 4-1 , C L = 15,000 pF
Power Supply
Power Supply Current
Operating Input Voltage
V DD Ramp Rate
I S
V DD
SV DD
4.5
0.2
140
40
200
100
18.0
μA
μA
V
V/ms
V IN = 3V
V IN = 0V
Note 1:
2:
Switching times ensured by design.
Tested during characterization, not production tested.
3: Valid for AT and MF packages only. T A = +25°C.
DS21987B-page 4
? 2006-2012 Microchip Technology Inc.
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