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| 型号： | TC4469MJD |
| 厂商： | Microchip Technology |
| 文件页数： | 9/22页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR AND/INV 14CDIP |
| 标准包装： | 29 |
| 配置： | 低端 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 40ns |
| 电流 - 峰： | 1.2A |
| 配置数： | 4 |
| 输出数： | 4 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 14-CDIP（0.300"，7.62mm） |
| 供应商设备封装： | 14-CERDIP |
| 包装： | 管件 |
TC4467/TC4468/TC4469
4.0
DETAILED DESCRIPTION
4.4
Power Dissipation
4.1
Supply Bypassing
The supply current versus frequency and supply
current versus capacitive load characteristic curves will
Large currents are required to charge and discharge
large capacitive loads quickly. For example, charging a
1000 pF load to 18 V in 25 nsec requires 0.72 A from
the device's power supply.
To ensure low supply impedance over a wide frequency
range, a 1 μF film capacitor in parallel with one or two
low-inductance, 0.1 μF ceramic disk capacitors with
short lead lengths (<0.5 in.) normally provide adequate
bypassing.
aid in determining power dissipation calculations.
Microchip Technology's CMOS drivers have greatly
reduced quiescent DC power consumption.
Input signal duty cycle, power supply voltage and load
type influence package power dissipation. Given power
dissipation and package thermal resistance, the maxi-
mum ambient operating temperature is easily
calculated. The 14-pin plastic package junction-to-
ambient thermal resistance is 83.3°C/W. At +70°C, the
4.2
Grounding
package is rated at 800 mW maximum dissipation.
Maximum allowable chip temperature is +150°C.
The TC4467 and TC4469 contain inverting drivers.
Potential drops developed in common ground
impedances from input to output will appear as
negative feedback and degrade switching speed
characteristics. Instead, individual ground returns for
input and output circuits, or a ground plane, should be
used.
Three components make up total package power
dissipation:
1. Load-caused dissipation (P L ).
2. Quiescent power (P Q ).
3. Transition power (P T ).
A capacitive-load-caused dissipation (driving MOSFET
gates), is a direct function of frequency, capacitive load
4.3
Input Stage
and supply voltage. The power dissipation is:
P L = fCV S
The input voltage level changes the no-load or
quiescent supply current. The N-channel MOSFET
input stage transistor drives a 2.5 mA current source
load. With logic “ 0 ” outputs, maximum quiescent supply
EQUATION
2
current is 4 mA. Logic “ 1 ” output level signals reduce
quiescent current to 1.4 mA, maximum. Unused driver
inputs must be connected to V DD or V SS . Minimum
power dissipation occurs for logic “ 1 ” outputs.
The drivers are designed with 50 mV of hysteresis,
which provides clean transitions and minimizes output
stage current spiking when changing states. Input volt-
age thresholds are approximately 1.5 V, making any
voltage greater than 1.5 V, up to V DD , a logic “ 1 ” input.
Input current is less than 1 μA over this range.
? 2002 Microchip Technology Inc.
f = Switching Frequency
C = Capacitive Load
V S = Supply Voltage
A resistive-load-caused dissipation for ground-
referenced loads is a function of duty cycle, load
current and load voltage. The power dissipation is:
EQUATION
P L = D ( V S – V L ) I L
D = Duty Cycle
V S = Supply Voltage
V L = Load Voltage
I L = Load Current
DS21425B-page 9
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