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参数资料
| 型号： | TC55VZM216AFTN12 |
| 元件分类： | SRAM |
| 英文描述： | 256K X 16 CACHE SRAM, 12 ns, PDSO44 |
| 封装： | 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44 |
| 文件页数： | 4/11页 |
| 文件大小： | 183K |
| 代理商： | TC55VZM216AFTN12 |
TC55VZM216AJJN/AFTN08,10,12
2003-01-17
2/11
BLOCK DIAGRAM
MAXIMUM RATINGS
SYMBOL
RATING
VALUE
UNIT
VDD
Power Supply Voltage
0.5 to 4.6
V
VIN
Input Terminal Voltage
0.5* to 4.6
V
VI/O
Input/Output Terminal Voltage
0.5* to VDD + 0.5**
V
PD
Power Dissipation
1.4
W
Tsolder
Soldering Temperature (10s)
260
°C
Tstg
Storage Temperature
65 to 150
°C
Topr
Operating Temperature
10 to 85
°C
*:
1.5 V with a pulse width of 20% of tRC min (4 ns max)
**: VDD + 1.5 V with a pulse width of 20% of tRC min (4 ns max)
I/O1
CE
VDD
GND
I/O8
WE
CE
I/O9
OE
UB
LB
CE
A2 A3 A6 A7 A10 A11 A12
A0
A1
A4
A5
A8
A9
A13
A14
A15
A17
A16
CLOCK
GENERATOR
COLUMN ADDRESS BUFFER
COLUMN DECODER
SENSE AMP
MEMORY CELL ARRAY
1,024
× 256 × 16
(4,194,304)
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
I/O16
DA
T
A
OUTP
UT
BU
FFER
DA
T
A
IN
PU
T
BU
FFER
DA
T
A
IN
PU
T
BU
FFER
DA
T
A
OUTP
UT
BU
FFER
RO
W
A
DDRE
SS
BU
F
ER
RO
W
DE
CODE
R
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TC55VZM216AFTN-12 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:262,144-WORD BY 16-BIT CMOS STATIC RAM |
| TC55VZM216AJJN08 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:262,144-WORD BY 16-BIT CMOS STATIC RAM |
| TC55VZM216AJJN-08 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:262,144-WORD BY 16-BIT CMOS STATIC RAM |
| TC55VZM216AJJN10 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:262,144-WORD BY 16-BIT CMOS STATIC RAM |
| TC55VZM216AJJN-10 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:262,144-WORD BY 16-BIT CMOS STATIC RAM |
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