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参数资料
| 型号： | TC55VZM216AFTN12 |
| 元件分类： | SRAM |
| 英文描述： | 256K X 16 CACHE SRAM, 12 ns, PDSO44 |
| 封装： | 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44 |
| 文件页数： | 6/11页 |
| 文件大小： | 183K |
| 代理商： | TC55VZM216AFTN12 |
TC55VZM216AJJN/AFTN08,10,12
2003-01-17
4/11
OPERATING MODE
MODE
CE
OE
WE
LB
UB
I/O1 to I/O8
I/O9 to I/O16
POWER
L
Output
IDDO
H
L
High Impedance
Output
IDDO
Read
L
H
L
H
Output
High Impedance
IDDO
L
Input
IDDO
H
L
High Impedance
Input
IDDO
Write
L
*
L
H
Input
High Impedance
IDDO
L
H
*
Outputs Disable
L
*
H
High Impedance
IDDO
Standby
H
*
High Impedance
IDDS
* : Don’t care
Note:
The NU pin must be left unconnected or tied to GND.
You must not apply a voltage of more than 0.8 V to the NU.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TC55VZM216AFTN-12 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:262,144-WORD BY 16-BIT CMOS STATIC RAM |
| TC55VZM216AJJN08 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:262,144-WORD BY 16-BIT CMOS STATIC RAM |
| TC55VZM216AJJN-08 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:262,144-WORD BY 16-BIT CMOS STATIC RAM |
| TC55VZM216AJJN10 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:262,144-WORD BY 16-BIT CMOS STATIC RAM |
| TC55VZM216AJJN-10 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:262,144-WORD BY 16-BIT CMOS STATIC RAM |
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