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参数资料
| 型号： | TC55VZM216AFTN12 |
| 元件分类： | SRAM |
| 英文描述： | 256K X 16 CACHE SRAM, 12 ns, PDSO44 |
| 封装： | 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44 |
| 文件页数： | 5/11页 |
| 文件大小： | 183K |
| 代理商： | TC55VZM216AFTN12 |
TC55VZM216AJJN/AFTN08,10,12
2003-01-17
3/11
DC RECOMMENDED OPERATING CONDITIONS (Ta
==== 0° to 70°C)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNIT
VDD
Power Supply Voltage
3.0
3.3
3.6
V
VIH
Input High Voltage
2.0
VDD + 0.3**
V
VIL
Input Low Voltage
0.3*
0.8
V
*:
1.0 V with a pulse width of 20% of tRC min (4 ns max)
**: VDD + 1.0 V with a pulse width of 20% of tRC min (4 ns max)
DC CHARACTERISTICS (Ta
==== 0° to 70°C, VDD ==== 3.3 V ±±±± 0.3 V)
SYMBOL
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
IIL
Input Leakage Current
(Except NU pin)
VIN = 0 to VDD
1
1
A
ILO
Output Leakage
Current
CE
= VIH or WE = VIL or OE = VIH,
VOUT = 0 to VDD
1
1
A
II (NU)
Input Leakage Current
(NU pin)
VIN = 0 V
1
1
A
IOH = 2 mA
2.4
VOH
Output High Voltage
IOH = 100 A
VDD 0.2
IOL = 2 mA
0.4
VOL
Output Low Voltage
IOL = 100 A
0.2
V
tcycle = 8 ns
170
tcycle = 10 ns
160
IDDO1
CE
= VIL, IOUT = 0 mA,
OE
= VIH,
Other Input
= VIH/VIL
tcycle = 12 ns
150
tcycle = 8 ns
140
tcycle = 10 ns
130
IDDO2
Operating Current
CE
= 0.2 V, IOUT = 0 mA,
OE
= VDD 0.2 V,
Other Input
= VDD 0.2 V/0.2 V
tcycle = 12 ns
120
mA
IDDS1
CE
= VIH, Other Input = VIH or VIL
55
IDDS2
Standby Current
CE
= VDD 0.2 V, Other Input = VDD 0.2 V or 0.2 V
4
mA
CAPACITANCE (Ta
==== 25°C, f ==== 1 .0 MHz)
SYMBOL
PARAMETER
TEST CONDITION
MAX
UNIT
CIN
Input Capacitance
VIN = GND
6
pF
CI/O
Input/Output Capacitance
VI/O = GND
8
pF
Note:
This parameter is periodically sampled and is not 100% tested.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TC55VZM216AFTN-12 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:262,144-WORD BY 16-BIT CMOS STATIC RAM |
| TC55VZM216AJJN08 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:262,144-WORD BY 16-BIT CMOS STATIC RAM |
| TC55VZM216AJJN-08 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:262,144-WORD BY 16-BIT CMOS STATIC RAM |
| TC55VZM216AJJN10 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:262,144-WORD BY 16-BIT CMOS STATIC RAM |
| TC55VZM216AJJN-10 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:262,144-WORD BY 16-BIT CMOS STATIC RAM |
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