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参数资料
| 型号： | TDA6111Q/N4 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 音频／视频放大 |
| 英文描述： | 1 CHANNEL, VIDEO AMPLIFIER, PZFM9 |
| 封装： | PLASTIC, SOT-111, DIL-BENT-SIL, 9 PIN |
| 文件页数： | 15/18页 |
| 文件大小： | 114K |
| 代理商： | TDA6111Q/N4 |
1995 Feb 07
6
Philips Semiconductors
Preliminary specication
Video output amplier
TDA6111Q
CHARACTERISTICS
Operating range: Tamb = 20 to 65 °C; VDDH = 180 to 210 V; VDDL = 10.8 to 13.2 V; Vip = 2.6 to 5 V;
Vom =1.4VtoVDDL.
Test conditions (unless otherwise specied): Tamb =25 °C; VDDH = 200 V; VDDL = 12 V; Vip =5V; Vom =6V; CL =10pF
(CL consists of parasitic and cathode capacitance); Rth-heatsink = 10 K/W; measured in test circuit Fig.3.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IDDH
quiescent HIGH voltage supply current Voc = 0.5VDDH
7.0
9.0
11.0
mA
IDDL
quiescent LOW voltage supply current
Voc = 0.5VDDH
5.0
6.8
8.0
mA
Ibias
input bias current
Voc = 0.5VDDH
0
40
A
Ioffset
input offset current
Voc = 0.5VDDH
6
+6
A
Iom(offset)
offset current of measurement output
Ioc =0 A;
1.0V<V13 < 1.0 V;
1.4 V < Vom <VDDL
10
0
+10
A
linearity of current transfer
10 A<I
oc < 3 mA;
1.0V<V13 < 1.0 V;
1.4 V < Vom <VDDL
0.9
1.0
1.1
Voffset
input offset voltage
Voc = 0.5VDDH
50
+50
mV
Voc(min)
minimum output voltage
V13 = 1V
20
V
Voc(max)
maximum output voltage
V13 = 1V
VDDH 12
V
GB
gain-bandwidth product of open-loop
gain: Vfb /Vi, dm
f = 500 kHz; VocDC = 100 V
1.6
GHz
BS
small signal bandwidth
VocAC = 60 V (p-p);
VocDC = 100 V
13
16
MHz
BL
large signal bandwidth
VocAC = 100 V (p-p);
VocDC = 100 V
10
13
MHz
tpd
cathode output propagation delay time
50% input to 50% output
VocAC = 100 V (p-p);
VocDC = 100 V square
wave; f < 1 MHz;
tr =tf =22ns;
see Figs 4 and 5
17
23
29
ns
tr
cathode output rise time 10% output to
90% output
Voc = 50 to 150 V square
wave; f < 1 MHz; tf = 22 ns;
see Fig.4
23
30
36
ns
tf
cathode output fall time 90% output to
10% output
Voc = 150 to 50 V square
wave; f < 1 MHz; tr = 22 ns;
see Fig.5
23
30
36
ns
ts
settling time 50% input to
(99% < output < 101%)
VocAC = 100 V (p-p);
VocDC = 100 V square
wave; f < 1 MHz;
tr =tf =22ns;
see Figs 4 and 5
350
ns
SR
slew rate between 50 V to 150 V
V13 = 2 V (p-p) square
wave; f < 1 MHz;
tr =tf =22ns
3000
V/
s
I
om
I
oc
------------
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