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参数资料
| 型号： | TDF8554J/N4 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 音频／视频放大 |
| 英文描述： | 44 W, 4 CHANNEL, AUDIO AMPLIFIER, PZFM37 |
| 封装： | PLASTIC, SOT725-1, 37 PIN |
| 文件页数： | 30/56页 |
| 文件大小： | 597K |
| 代理商： | TDF8554J/N4 |
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TDF8554J
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 31 August 2011
36 of 56
NXP Semiconductors
TDF8554J
4
45 W power amplifier with multiple voltage regulator
Diagnostics
VOL(DIAG)
LOW-level output voltage on
pin DIAG
fault condition (pin LOW); IDIAG =1mA
-
0.3
V
VO(offset_det)
output voltage at offset
detection
1.0
1.3
2.0
V
THDclip
total harmonic distortion clip
detection level
VP > 10 V
IB4[D7] = 1
-
10
-
%
IB3[D7] = 0; IB4[D7] = 0
-
5
-
%
IB3[D7] = 1; IB4[D7] = 0
-
2
-
%
Tj(AV)(pwarn)
pre-warning average
junction temperature
IB3[D4] = 0
150
160
170
C
IB3[D4] = 1
125
135
145
C
Tj(AV)(G(0.5dB)) average junction
temperature for 0.5 dB gain
reduction
Vi = 0.05 V
-
175
-
C
G
(th_fold)
gain reduction of thermal
foldback
when all channels switch off
-
20
-
dB
Io
output current
peak current:
AC-load detected; IB4[D5] = 0
500
-
mA
AC-load detected; IB4[D5] = 1
275
-
mA
no AC-load detected; IB4[D5] = 0
-
250
mA
no AC-load detected; IB4[D5] = 1
-
110
mA
Amplifier
Po
output power
RL =4 ; VP = 14.4 V; THD = 0.5 %
18
20
-
W
RL =4 ; VP = 14.4 V; THD = 10 %
23
25
-
W
RL =2 ; VP = 14.4 V; THD = 0.5 %
29
32
-
W
RL =2 ; VP = 14.4 V; THD = 10 %
40
44
-
W
Po(max)
maximum output power
RL =4 ; VP =14.4 V; Vi =2VRMS
square wave
37
40
-
W
RL =4 ; VP =15.2 V; Vi =2VRMS
square wave
41
45
-
W
RL =2 ; VP =14.4 V; Vi =2VRMS
square wave
58
64
-
W
THD
total harmonic distortion
Po =1Wto12W; fi = 1 kHz; RL =4
-0.01
0.1
%
Po =1Wto12W; fi =10kHz
-
0.2
0.4
%
line driver mode; Vo = 1 V (RMS) and
4 V (RMS)
-0.02
0.05
%
low gain mode; Po =1Wto12W;
fi = 1 kHz; RL =4
-0.01
0.1
%
cs
channel separation
RS =1k; RACGND = 250
fi =1kHz
65
80
-
dB
fi = 10 kHz
55
65
-
dB
Table 25.
Amplifier characteristics …continued
Refer to test circuit (see Figure 30) at Tamb =25 C; VP = 14.4 V; unless otherwise specified. Tested at Tamb =25 C;
guaranteed for Tj = 40 C to +150 C; functionality guaranteed for VP < 10 V unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
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