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参数资料
| 型号： | TE28F800C3TD70 |
| 厂商： | INTEL CORP |
| 元件分类： | PROM |
| 英文描述： | 512K X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| 封装： | 12 X 20 MM, TSOP-48 |
| 文件页数： | 15/72页 |
| 文件大小： | 1083K |
| 代理商： | TE28F800C3TD70 |
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Intel Advanced+ Boot Block Flash Memory (C3)
May 2005
Intel Advanced+ Boot Block Flash Memory (C3)
Datasheet
22
Order Number: 290645, Revision: 023
6.0
Electrical Specifications
6.1
Current Characteristics
Table 6.
DC Current Characteristics (Sheet 1 of 2)
Sym
Parameter
VCC
2.7 V–3.6 V
2.7 V–2.85 V
2.7 V–3.3 V
Unit
Test Conditions
VCCQ
2.7 V–3.6 V
1.65 V–2.5 V
1.8 V–2.5 V
Note
Typ
Max
Typ
Max
Typ
Max
ILI
Input Load Current
1,2
± 1
± 1A
VCC = VCCMax
VCCQ = VCCQMax
VIN = VCCQ or GND
ILO
Output Leakage
Current
1,2
± 10
A
VCC = VCCMax
VCCQ = VCCQMax
VIN = VCCQ or GND
ICCS
VCC Standby Current
for 0.13 and 0.18
Micron Product
1
7
15
20
50
150
250
A
VCC = VCCMax
CE# = RP# = VCCQ
or during Program/ Erase
Suspend
WP# = VCCQ or GND
VCC Standby Current
for 0.25 Micron
Product
1
10
25
20
50
150
250
A
ICCD
VCC Power-Down
Current for 0.13 and
0.18 Micron Product
1,2
7
15
7
20
7
20
A
VCC = VCCMax
VCCQ = VCCQMax
VIN = VCCQ or GND
RP# = GND ± 0.2 V
VCC Power-Down
Current for 0.25
Product
1,2
7
25
7
25
7
25
A
ICCR
VCC Read Current for
0.13 and 0.18 Micron
Product
1,2,3
9
18
8
15
9
15
mA
VCC = VCCMax
VCCQ = VCCQMax
OE# = VIH, CE# =VIL
f = 5 MHz, IOUT=0 mA
Inputs = VIL or VIH
VCC Read Current for
0.25 Micron Product
1,2,3
10
18
8
15
9
15
mA
IPPD
VPP Deep Power-
Down Current
1
0.2
5
0.250.2
5
A
RP# = GND ± 0.2 V
VPP ≤ VCC
ICCW
VCC Program Current
1,4
18
55
18
55
18
55
mA
VPP =VPP1,
Program in Progress
8
22
103010
30
mA
VPP = VPP2 (12v)
Program in Progress
ICCE
VCC Erase Current
1,4
16
45
21
45
21
45
mA
VPP = VPP1,
Erase in Progress
8
15
164516
45
mA
VPP = VPP2 (12v) ,
Erase in Progress
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相关代理商/技术参数 |
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| TE28F800CEB120 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
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