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参数资料
| 型号： | TE28F800C3TD70 |
| 厂商： | INTEL CORP |
| 元件分类： | PROM |
| 英文描述： | 512K X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| 封装： | 12 X 20 MM, TSOP-48 |
| 文件页数： | 16/72页 |
| 文件大小： | 1083K |
| 代理商： | TE28F800C3TD70 |
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Intel Advanced+ Boot Block Flash Memory (C3)
Datasheet
Intel Advanced+ Boot Block Flash Memory (C3)
May 2005
Order Number: 290645, Revision: 023
23
ICCES/
ICCWS
VCC Erase Suspend
Current for 0.13 and
0.18 Micron Product
1,4,5
7
15
50
200
50
200
A
CE# = VIH, Erase Suspend in
Progress
VCC Erase Suspend
Current for 0.25
Micron Product
10
25
50
200
50
200
A
IPPR
VPP Read Current
1,4
2
±15
2
±15
2
±15
A
VPP ≤ VCC
50
200
50
200
50
200
A
VPP > VCC
IPPW
VPP Program Current
1,4
0.05
0.1
0.05
0.1
0.05
0.1
mA
VPP =VPP1,
Program in Progress
822
8
22
8
22
mA
VPP = VPP2 (12v)
Program in Progress
IPPE
VPP Erase Current
1,4
0.05
0.1
0.05
0.1
0.05
0.1
mA
VPP = VPP1,
Erase in Progress
822
16
45
1645
mA
VPP = VPP2 (12v) ,
Erase in Progress
IPPES/
IPPWS
VCC Erase Suspend
Current
1,4
0.2
5
0.2
5
0.2
5
A
VPP = VPP1,
Program or Erase Suspend in
Progress
50
200
50
200
50
200
A
VPP = VPP2 (12v) ,
Program or Erase Suspend in
Progress
Notes:
1.All currents are in RMS unless otherwise noted. Typical values at nominal VCC, TA = +25 °C.
2.The test conditions VCCMax, VCCQMax, VCCMin, and VCCQMin refer to the maximum or minimum VCC or VCCQ voltage listed
at the top of each column. VCCMax = 3.3 V for 0.25m 32-Mbit devices.
3.Automatic Power Savings (APS) reduces ICCR to approximately standby levels in static operation (CMOS inputs).
4.Sampled, not 100% tested.
5.ICCES or ICCWS is specified with device de-selected. If device is read while in erase suspend, current draw is sum of ICCES and
ICCR. If the device is read while in program suspend, current draw is the sum of ICCWS and ICCR.
Table 6.
DC Current Characteristics (Sheet 2 of 2)
Sym
Parameter
VCC
2.7 V–3.6 V
2.7 V–2.85 V
2.7 V–3.3 V
Unit
Test Conditions
VCCQ
2.7 V–3.6 V
1.65 V–2.5 V
1.8 V–2.5 V
Note
Typ
Max
Typ
Max
Typ
Max
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