参数资料
型号: TEA1104T-T
厂商: NXP SEMICONDUCTORS
元件分类: 电源管理
英文描述: 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8
文件页数: 16/16页
文件大小: 100K
代理商: TEA1104T-T
1996 Feb 26
9
Philips Semiconductors
Objective specication
Cost effective battery monitor and fast
charge IC for NiCd and NiMH chargers
TEA1104; TEA1104T
CHARACTERISTICS
VP = 10 V; Tamb =25 °C; Rref =33k;COSC = 1 nF; unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
VP
supply voltage
5.45
11.5
V
VP/t
supply voltage start rate
0.5
V/
s
Vclamp
clamping voltage
Iclamp =25mA
11.5
12.8
V
Vstart
start-up voltage
6.1
6.4
6.7
V
Vpd
power-down voltage level
4.65
5.05
5.45
V
IP
supply current
outputs off
3mA
Istart
start-up current
VP =4V
45
50
A
VS
stabilized voltage
IS = 1 mA
4.03
4.25
4.46
V
VRref
voltage range at reference resistor
IRref =20 A
1.18
1.25
1.31
V
TCVref
temperature coefcient of the
reference voltage
Tamb = 0 to 45 °C
±60
±120
ppm/K
IRref
current range of the reference
resistor
10
100
A
Temperature related input; NTC
Vi(co)
input voltage level for detecting
temperature cut-off
0.75
0.81
0.87
V
Vi(co; max)
maximum input voltage level for
detecting temperature cut-off
0.92
1.0
1.08
V
Vi(co; min)
minimum input voltage level for
detecting temperature cut-off
1.85
2.0
2.15
V
INTC
input current
VNTC = 1.5 V
5
+5
A
Output drivers
δLED
LED pulse duty factor
2.4
2.5
2.6
%
VLED(sat)
LED saturation voltage
ILED(sat) =15mA
600
mV
ILI(LED)
LED input leakage current
VLED =15V
5
A
Battery monitor
Ii(bat)
input battery current
Vbat = 2.4 V
1
nA
Vbat
voltage range for peak detection
0.81
3.6
V
bat/Vbat
peak detection level with respect to
top level
Vbat =2V
0.25
%
Tj
temperature range of peak
detection
0
50
°C
Protections; BAT
Vbat(l)
low level battery protection voltage
0.81
0.91
V
Vbat(h)
high level battery protection voltage
3.5
3.6
4.5
V
Oscillator
k
correction factor
0.84
0.93
1.02
fosc
frequency range
10
100
kHz
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