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参数资料
| 型号： | THS4211DRB |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 音频／视频放大 |
| 英文描述： | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
| 封装： | PLASTIC, MSOP-8 |
| 文件页数： | 12/40页 |
| 文件大小： | 1013K |
| 代理商： | THS4211DRB |
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THS4211
THS4215
SLOS400C SEPTEMBER 2002 REVISED JANUARY 2004
www.ti.com
2
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted(1)
UNIT
Supply voltage, VS
16.5 V
Input voltage, VI
±VS
Output current, IO (2)
100 mA
Continuous power dissipation
See Dissipation Rating Table
Maximum junction temperature, TJ (3)
150
°C
Maximum junction temperature, continuous
operation, long term reliability TJ (4)
125
°C
Operating free-air temperature range, TA
40
°C to 85°C
Storage temperature range, Tstg
65
°C to 150°C
Lead temperature
1,6 mm (1/16 inch) from case for 10 seconds
300
°C
HBM
4000 V
ESD ratings:
CDM
1500 V
ESD ratings:
MM
200 V
(1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods
may degrade device reliability. These are stress ratings only, and
functional operation of the device at these or any other conditions
beyond those specified is not implied.
(2) The THS4211/5 may incorporate a PowerPAD
on the underside
of the chip. This acts as a heat sink and must be connected to a
thermally dissipative plane for proper power dissipation. Failure
to do so may result in exceeding the maximum junction
temperature which could permanently damage the device. See TI
technical briefs SLMA002 and SLMA004 for more information
about utilizing the PowerPAD thermally enhanced package.
(3) The absolute maximum temperature under any condition is
limited by the constraints of the silicon process.
(4) The maximum junction temperature for continuous operation is
limited by package constraints. Operation above this temperature
may result in reduced reliability and/or lifetime of the device.
This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be
handled with appropriate precautions. Failure to observe
proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to
complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
PACKAGE DISSIPATION RATINGS
PACKAGE
θJC
θJA(1)
POWER RATING(2)
PACKAGE
θJC
(
°C/W)
θJA(1)
(
°C/W)
TA ≤ 25°C
TA = 85°C
D (8 pin)
38.3
97.5
1.02 W
410 mW
DGN (8 pin)
4.7
58.4
1.71 W
685 mW
DGK (8 pin)
54.2
260
385 mW
154 mW
DRB (8 pin)
5
45.8
2.18 W
873 mW
(1) This data was taken using the JEDEC standard High-K test PCB.
(2) Power rating is determined with a junction temperature of 125°C.
This is the point where distortion starts to substantially increase.
Thermal management of the final PCB should strive to keep the
junction temperature at or below 125
°C for best performance and
long term reliability.
RECOMMENDED OPERATING CONDITIONS
MIN
MAX
UNIT
Supply voltage,
Dual supply
±2.5
±7.5
V
Supply voltage,
(VS+ and VS)
Single supply
5
15
V
Input common-mode voltage
range
VS + 1.2 VS+ 1.2
V
PACKAGING/ORDERING INFORMATION
ORDERABLE PACKAGE AND NUMBER
TEMPERATURE
PLASTIC
SMALL OUTLINE
LEADLESS MSOP 8 (2)
PLASTIC MSOP (1)
PowerPAD
PLASTIC MSOP (1)
TEMPERATURE
SMALL OUTLINE
(D) (1)
(DRB)
PACKAGE
MARKING
(DGN)
PACKAGE
MARKING
(DGK)
PACKAGE
MARKING
40
°C to 85°C
THS4211D
THS4211DRB
BET
THS4211DGN
BFN
THS4211DGK
BEJ
40
°C to 85°C
THS4215D
THS4215DRB
BEU
THS4215DGN
BFQ
THS4215DGK
BEZ
(1) All packages are available taped and reeled. The R suffix standard quantity is 2500 (e.g., THS4211DGNR).
(2) All packages are available taped and reeled. The R suffix standard quantity is 3000. The T suffix standard quantity is 250 (e.g., THS4211DBVT).
PIN ASSIGNMENTS
(TOP VIEW)
D, DRB, DGK, DGN
(TOP VIEW)
D, DRB, DGK, DGN
1
NC
THS4211
2
3
4
8
7
6
5
IN
IN +
VS
VS+
VOUT
NC
1
REF
PD
THS4215
2
3
4
8
7
6
5
IN
IN +
VS
VS+
VOUT
NC
相关PDF资料 |
PDF描述 |
|---|---|
| THS4215DRB | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
| THS4215DG4 | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
| THS4215DGNR | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
| THS4215DGN | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
| THS4215DRBR | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| THS4211DRBR | 功能描述:高速运算放大器 Super-Fast Ultr-Lo- Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4211DRBRG4 | 功能描述:高速运算放大器 Super-Fast Ultr-Lo- Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4211DRBT | 功能描述:高速运算放大器 Super-Fast Ultr-Lo- Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4211DRBTG4 | 功能描述:高速运算放大器 Super-Fast Ultr-Lo- Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4211DRG4 | 功能描述:高速运算放大器 Super-Fast Ultr-Lo- Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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