参数资料
型号: THS4211DRB
厂商: TEXAS INSTRUMENTS INC
元件分类: 音频/视频放大
英文描述: 1 CHANNEL, VIDEO AMPLIFIER, PDSO8
封装: PLASTIC, MSOP-8
文件页数: 21/40页
文件大小: 1013K
代理商: THS4211DRB
THS4211
THS4215
SLOS400C SEPTEMBER 2002 REVISED JANUARY 2004
www.ti.com
28
When determining whether or not the device satisfies the
maximum power dissipation requirement, it is important to
consider not only quiescent power dissipation, but also
dynamic power dissipation. Often maximum power
dissipation is difficult to quantify because the signal pattern
is inconsistent, but an estimate of the RMS power
dissipation can provide visibility into a possible problem.
DESIGN TOOLS
Performance vs Package Options
The THS4211 and THS4215 are offered in a different
package options. However, performance may be limited
due to package parasitics and lead inductance in some
packages. In order to achieve maximum performance of
the
THS4211
and
THS4215,
Texas
Instruments
recommends using the leadless MSOP (DRB) or MSOP
(DGN) packages, in additions to proper high-speed PCB
layout. Figure 92 shows the unity gain frequency response
of the THS4211 using the leadless MSOP, MSOP, and
SOIC package for comparison. Using the THS4211 and
THS4215 in a unity gain with the SOIC package may result
in the device becoming unstable. In higher gain
configurations, this effect is mitigated by the reduced
bandwidth. As such, the SOIC is suitable for application
with gains equal to or higher than +2 V/V or (1 V/V).
Figure 92. Effects of Unity Gain Frequency
Response for Differential Packages
4
2
10
12
10 M
100 M
1 G
f Frequency Hz
Normalized
Gain
dB
0
8
6
4
2
SOIC, Rf = 0
PIN = 7 dB
VS =±5 V
Leadless MSOP, &
MSOP Rf = 0
SOIC, Rf = 100
_
+
Rf
49.9
499
相关PDF资料
PDF描述
THS4215DRB 1 CHANNEL, VIDEO AMPLIFIER, PDSO8
THS4215DG4 1 CHANNEL, VIDEO AMPLIFIER, PDSO8
THS4215DGNR 1 CHANNEL, VIDEO AMPLIFIER, PDSO8
THS4215DGN 1 CHANNEL, VIDEO AMPLIFIER, PDSO8
THS4215DRBR 1 CHANNEL, VIDEO AMPLIFIER, PDSO8
相关代理商/技术参数
参数描述
THS4211DRBR 功能描述:高速运算放大器 Super-Fast Ultr-Lo- Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
THS4211DRBRG4 功能描述:高速运算放大器 Super-Fast Ultr-Lo- Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
THS4211DRBT 功能描述:高速运算放大器 Super-Fast Ultr-Lo- Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
THS4211DRBTG4 功能描述:高速运算放大器 Super-Fast Ultr-Lo- Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
THS4211DRG4 功能描述:高速运算放大器 Super-Fast Ultr-Lo- Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube