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| 型号： | THS4281DG4 |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 音频／视频放大 |
| 英文描述： | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
| 封装： | GREEN, PLASTIC, SOIC-8 |
| 文件页数： | 12/37页 |
| 文件大小： | 1063K |
| 代理商： | THS4281DG4 |
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SLOS432A – APRIL 2004 – REVISED NOVEMBER 2009
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ABSOLUTE MAXIMUM RATINGS
(1)
Over operating free-air temperature range (unless otherwise noted).
UNIT
Supply voltage, VS– to VS+
16.5 V
Input voltage, VI
±VS ± 0.5 V
Differential input voltage, VID
±2 V
Output current, IO
±100 mA
Continuous power dissipation
See Dissipation Ratings Table
Maximum junction temperature, any condition, (2) TJ
+150°C
Maximum junction temperature, continuous operation, long-term reliability(2) TJ
+125°C
Storage temperature range, Tstg
–65°C to +150°C
HBM
3500 V
ESD ratings
CDM
1500 V
MM
100 V
(1)
The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may
cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
(2)
The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device. recommended operating conditions.
RECOMMENDED OPERATING CONDITIONS
MIN
MAX
UNIT
Dual supply
±1.35
±8.25
Supply voltage, (VS+ and VS –)
V
Single supply
2.7
16.5
DISSIPATION RATINGS TABLE PER PACKAGE
θJA
(1)
POWER RATING(2)
θJC
PACKAGE
(°C/W)
TA < +25°C
TA = +85°C
DBV (5)
55
255.4
391 mW
156 mW
D (8)
38.3
97.5
1.02 W
410 mW
DGK (8)
71.5
180.8
553 mW
221 mW
(1)
This data was taken using the JEDEC standard High-K test PCB.
(2)
Power rating is determined with a junction temperature of +125°C. This is the point where distortion starts to substantially increase.
Thermal management of the final PCB should strive to keep the junction temperature at or below +125°C for best performance and long
term reliability.
2
Copyright 2004–2009, Texas Instruments Incorporated
Product Folder Link(s): THS4281
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相关代理商/技术参数 |
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| THS4281DGK | 功能描述:高速运算放大器 Very Lo-Pwr R-To-R I/O Voltage Feedback RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4281DGKG4 | 功能描述:高速运算放大器 Very Lo-Pwr R-To-R I/O Voltage Feedback RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4281DGKR | 功能描述:高速运算放大器 Very Lo-Pwr R-To-R I/O Voltage Feedback RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4281DGKRG4 | 功能描述:高速运算放大器 Very Lo-Pwr R-To-R I/O Voltage Feedback RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4281DR | 功能描述:高速运算放大器 Very Lo-Pwr R-To-R I/O Voltage Feedback RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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