- 您现在的位置：买卖IC网 > PDF目录297500 > TIP112F (KEC Holdings) EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) PDF资料下载
参数资料
| 型号： | TIP112F |
| 厂商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) |
| 中文描述： | 外延平面NPN晶体管（单片施工技术基础之上的发射极分流器工业用途。） |
| 文件页数： | 1/2页 |
| 文件大小： | 41K |
| 代理商： | TIP112F |
2002. 6. 25
1/2
SEMICONDUCTOR
TECHNICAL DATA
TIP112F
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES
High DC Current Gain.
: hFE=1000(Min.),
VCE=4V, IC=1A.
Low Collector-Emitter Saturation Voltage.
Complementary to TIP117F.
MAXIMUM RATING (Ta=25
)
DIM
MILLIMETERS
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
10.30 MAX
15.30 MAX
2.70 0.30
0.85 MAX
Φ3.20 0.20
3.00 0.30
A
B
C
D
E
F
G
12.30 MAX
0.75 MAX
H
13.60 0.50
3.90 MAX
1.20
1.30
2.54
4.50 0.20
6.80
2.60 0.20
10
J
K
L
M
N
O
P
Q
R
F
O
Q
1
2
3
L
P
N
B
G
J
M
D
N
T
H
E
R
T
V
S
K
L
U
T
S
0.5
5
25
2.60 0.15
V
U
D
A
C
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
DC
IC
2
A
Pulse
ICP
4
Base Current
DC
IB
50
mA
Collector Power
Dissipation
Ta=25
PC
2
W
Tc=25
20
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-65
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICEO
VCE=50V, IB=0
-
2
mA
ICBO
VCB=100V, IE=0
-
1
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
-
2
mA
DC Current Gain
hFE
VCE=4V, IC=1A
1000
-
VCE=4V, IC=2A
500
-
Collector-Emitter Sustaining Voltage
VCEO(SUS)
IC=30mA, IB=0
100
-
V
Collector-Emitter Saturation Voltage
VCE(sat)
IC=2A, IB=8mA
-
2.5
V
Base-Emitter On Voltage
VBE(ON)
VCE=4V, IC=2A
-
2.8
V
Collector Output Capacitance
Cob
VCB=10V, IE=0, f=0.1MHz
-
100
pF
C
B
E
R
10k
0.6k
R
1
2
=
EQUIVALENT CIRCUIT
相关PDF资料 |
PDF描述 |
|---|---|
| TIP117F | EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) |
| TIP41CF | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE) |
| TKD12ZED-T | 50 WATT, 3/4 BRICK |
| TL16PNP100APT | SPECIALTY MICROPROCESSOR CIRCUIT, PQFP48 |
| TL431BU | 1-OUTPUT THREE TERM VOLTAGE REFERENCE, PDSO3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TIP112F_07 | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR |
| TIP112G | 功能描述:达林顿晶体管 2A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| TIP112G-T60-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR |
| TIP112G-TA3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR |
| TIP112G-TN3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。