参数资料
型号: TIP112F
厂商: KEC Holdings
英文描述: EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
中文描述: 外延平面NPN晶体管(单片施工技术基础之上的发射极分流器工业用途。)
文件页数: 2/2页
文件大小: 41K
代理商: TIP112F
2002. 6. 25
2/2
TIP112F
Revision No : 0
D
POWER
DISSIPATION
P
(W)
0
CASE TEMPERATURE Ta ( C)
D
P - Ta
h
- I
C
COLLECTOR CURRENT I
(A)
0.01
100K
FE
10
DC
CURRENT
GAIN
h
FE
C
0.1
1
10
30
100
300
10K
30K
50
100
150
200
5
10
15
20
25
30
V =4V
CE
10
0.01
0.1
0.3
1
3
30
100
0.1
1
10
I /I =500
C
1
CB
COLLECTOR-BASE VOLTAGE V
(V)
C
- V
CAPACITANCE
C
(pF)
CB
0.01
SATURATION
VOLTAGE
BE(sat)
COLLECTOR CURRENT I
(A)
C
CE(sat)
BE(sat)
V
, V
- I
ob
0.1
1
10
100
3
5
10
30
50
100
300
500
1k
f=0.1MHz
C
V
,V
(V)
CE(sat)
I
- V
C
CE
COLLECTOR-EMITTER VOLTAGE V
(V)
0
1
C
0.4
COLLECTOR
CURRENT
I
(A)
COLLECTOR
CURRENT
I
(A)
C
0.1
5
1
COLLECTOR-EMITTER VOLTAGE V
(V)
CE
SAFE OPERATING AREA
23
4
5
I =150A
B
310
30
50
100
0.3
0.5
1
3
5
10
SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE
I MAX(PULSED)
C
DC OPERATION
1ms
0.8
1.2
1.6
2.0
200A
250A
300A
400
A
450
A
500
A
350
A
BE(sat)
V
CE(sat)
V
B
5ms
Tc=25 C
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