参数资料
型号: TIP32C
厂商: ON SEMICONDUCTOR
元件分类: 功率晶体管
英文描述: Complementary Silicon Plastic Power Transistors(互补型,塑料功率晶体管)
中文描述: 3 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封装: PLASTIC, CASE 221A-09, 3 PIN
文件页数: 5/6页
文件大小: 81K
代理商: TIP32C
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
http://onsemi.com
5
V
T
J
, JUNCTION TEMPERATURE (
°
C)
10
3
0.4
10
1
10
0
10
2
10
2
10
1
10
3
10
7
10
5
10
4
10
2
10
6
10
3
I
B
, BASE CURRENT (mA)
I
C
, COLLECTOR CURRENT (AMP)
h
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
I
C
, COLLECTOR CURRENT (AMP)
300
500
0.05 0.07
0.3
3.0
0.03
100
70
50
30
10
7.0
5.0
0.1
V
BE
, BASEEMITTER VOLTAGE (VOLTS)
Figure 10. “On” Voltages
V
CE
= 2.0 V
0.7 1.0
0.5
1.6
2.0
2.0
5.0
20
1000
1.0
0.8
0.4
10
0
100
200
500
50
25
°
C
T
J
= 150
°
C
55
°
C
1.2
1.4
0.003
I
C
, COLLECTOR CURRENT (AMPS)
1.0
0.8
0.4
1.2
0.6
0.2
0
0.005 0.01 0.02 0.03 0.05
0.1
+2.5
I
C
= 0.3 A
20
60
80
100
120
160
140
40
V
T
J
= 25
°
C
1.0 A
3.0 A
0.2 0.3
0.5
1.0
2.0 3.0
T
J
= 25
°
C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 2.0 V
V
CE(sat)
@ I
C
/I
B
= 10
V
θ
°
+2.0
+1.5
+1.0
+0.5
0
0.5
1.0
1.5
2.0
2.5
0.0030.005 0.01
0.02
0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0
*APPLIES FOR I
C
/I
B
h
FE
/2
T
J
= 65
°
C TO +150
°
C
*
VC
FOR V
CE(sat)
VB
FOR V
BE
Figure 11. Temperature Coefficients
,
I
0.3
0.2
0.1
0
+0.1
+0.2
+0.3
+0.4
+0.5
+0.6
Figure 12. Collector CutOff Region
Figure 13. Effects of BaseEmitter Resistance
V
CE
= 30 V
T
J
= 150
°
C
100
°
C
25
°
C
REVERSE
FORWARD
I
CES
R
V
CE
= 30 V
I
C
= 10 x I
CES
I
C
I
CES
I
C
= 2 x I
CES
(TYPICAL I
CES
VALUES
OBTAINED FROM FIGURE 12)
相关PDF资料
PDF描述
TIP33 NPN SILICON POWER TRANSISTORS
TIP33A NPN SILICON POWER TRANSISTORS
TIP33B NPN SILICON POWER TRANSISTORS
TIP33C CONN, D, 37POS, MTL, SHL, EMI, JUNCTION, (890183)
TIP34B COMPLEMENTARY SILICON POWER TRANSISTORS
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