参数资料
| 型号： | TISP4165H4BJR |
| 厂商： | Bourns Inc. |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | SURGE SUPP 135V BIDIR DO-214AA |
| 标准包装： | 3,000 |
| 电压 - 击穿： | 165V |
| 电压 - 断路： | 135V |
| 电压 - 导通状态： | 3V |
| 电流 - 峰值脉冲(8 x 20µs)： | 300A |
| 电流 - 峰值脉冲(10 x 1000µs)： | 100A |
| 电流 - 保持 (Ih)： | 225mA |
| 元件数： | 1 |
| 电容： | 79pF |
| 封装/外壳： | DO-214AA，SMB |
| 包装： | 带卷 (TR) |
TISP4xxxH4BJ Overvoltage Protector Series
Description
This TISP4xxxH4BJ range consists of six voltage variants to meet various maximum system voltage levels (135 V to 275 V). They are guaran-
teed to voltage limit and withstand the listed international lightning surges in both polarities. These high (H) current protection devices are in a
plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack. For alternative voltage and holding
current values, consult the factory. For lower rated impulse currents in the SMB package, the 50 A 10/1000 TISP4xxxM3BJ series is available.
Absolute Maximum Ratings, TA = 25 ° C (Unless Otherwise Noted)
Rating
‘4165
‘4180
Symbol
Value
± 135
± 145
Unit
Repetitive peak off-state voltage, (see Note 1)
‘4200
V DRM
± 155
V
‘4265
‘4300
‘4350
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10 μ s (GR-1089-CORE, 2/10 μ s voltage wave shape)
8/20 μ s (IEC 61000-4-5, 1.2/50 μ s voltage, 8/20 current combination wave generator)
10/160 μ s (FCC Part 68, 10/160 μ s voltage wave shape)
± 200
± 230
± 275
500
300
250
5/200 μ s (VDE 0433, 10/700 μ s voltage wave shape)
0.2/310 μ s (I3124, 0.5/700 μ s voltage wave shape)
5/310 μ s (ITU-T K .20/21, 10/700 μ s voltage wave shape)
5/310 μ s (FTZ R12, 10/700 μ s voltage wave shape)
10/560 μ s (FCC Part 68, 10/560 μ s voltage wave shape)
10/1000 μ s (GR-1089-CORE, 10/1000 μ s voltage wave shape)
I TSP
220
200
200
200
160
100
A
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
55
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A
Junction temperature
Storage temperature range
I TSM
di T /dt
T J
T stg
60
2.1
400
-40 to +150
-65 to +150
A
A/ μ s
° C
° C
NOTES: 1.
2.
3.
4.
5.
See Applications Information and Figure 10 for voltage values at lower temperatures.
Initially, the TISP4xxxH4BJ must be in thermal equilibrium with T J = 25 ° C.
The surge may be repeated after the TISP4xxxH4BJ returns to its initial conditions.
See Applications Information and Figure 11 for current ratings at other temperatures.
EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/ ° C for ambient
temperatures above 25 ° C.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TISP4165H4BJRS | 制造商:Bourns Inc 功能描述: |
| TISP4165H4BJR-S | 功能描述:硅对称二端开关元件 RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TISP4165H4BJ-S | 制造商:BOURNS 制造商全称:Bourns Electronic Solutions 功能描述:HIGH HOLDING CURRENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP4165J1 | 制造商:BOURNS 制造商全称:Bourns Electronic Solutions 功能描述:BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP4165J1BJR | 功能描述:硅对称二端开关元件 RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
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