参数资料
| 型号： | TISP4165H4BJR |
| 厂商： | Bourns Inc. |
| 文件页数： | 3/11页 |
| 文件大小： | 0K |
| 描述： | SURGE SUPP 135V BIDIR DO-214AA |
| 标准包装： | 3,000 |
| 电压 - 击穿： | 165V |
| 电压 - 断路： | 135V |
| 电压 - 导通状态： | 3V |
| 电流 - 峰值脉冲(8 x 20µs)： | 300A |
| 电流 - 峰值脉冲(10 x 1000µs)： | 100A |
| 电流 - 保持 (Ih)： | 225mA |
| 元件数： | 1 |
| 电容： | 79pF |
| 封装/外壳： | DO-214AA，SMB |
| 包装： | 带卷 (TR) |
TISP4xxxH4BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 ° C (Unless Otherwise Noted)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I DRM
Repetitive peak off-
state current
V D = V DRM
T A = 25 ° C
T A = 85 ° C
± 5
± 10
μ A
‘4165
‘4180
± 165
± 180
V (BO)
Breakover voltage
dv/dt = ± 750 V/ms, R SOURCE = 300 ?
‘4200
‘4265
± 200
± 265
V
‘4300
‘4350
‘4165
± 300
± 350
± 174
dv/dt ≤ ± 1000 V/ μ s, Linear voltage ramp,
‘4180
± 189
V (BO)
Impulse breakover
voltage
Maximum ramp value = ± 500 V
di/dt = ± 20 A/ μ s, Linear current ramp,
‘4200
‘4265
± 210
± 276
V
Maximum ramp value = ± 10 A
‘4300
‘4350
± 311
± 363
I (BO)
V T
I H
dv/dt
I D
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
dv/dt = ± 750 V/ms, R SOURCE = 300 ?
I T = ± 5 A, t W = 100 μ s
I T = ± 5 A, di/dt = -/+30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85V DRM
V D = ± 50 V
T A = 85 ° C
± 0.15
± 0.225
± 5
± 0.8
± 3
± 0.8
± 10
A
V
A
kV/ μ s
μ A
f = 100 kHz, V d = 1 V rms, V D = 0,
f = 100 kHz, V d = 1 V rms, V D = -1 V
‘4165 thru ‘4200
‘4265 thru ‘4350
‘4165 thru ‘4200
‘4265 thru ‘4350
80
70
71
60
90
84
79
67
C off
Off-state capacitance
f = 100 kHz, V d = 1 V rms, V D = -2 V
‘4165 thru ‘4200
‘4265 thru ‘4350
65
55
74
62
pF
NOTE
f = 100 kHz, V d = 1 V rms, V D = -50 V
f = 100 kHz, V d = 1 V rms, V D = -100 V
(see Note 6)
6: To avoid possible voltage clipping, the ‘4125 is tested with V D = -98 V.
‘4165 thru ‘4200
‘4265 thru ‘4350
‘4165 thru ‘4200
‘4265 thru ‘4350
30
24
28
22
35
28
33
26
Thermal Characteristics
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
R θ JA
Junction to free air thermal resistance
EIA/JESD51-3 PCB, I T = I TSM(1000) ,
T A = 25 °C, (see Note 7)
265 mm x 210 mm populated line card,
4-layer PCB, I T = I TSM(1000) , T A = 25 ° C
50
113
° C /W
NOTE
7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TISP4165H4BJRS | 制造商:Bourns Inc 功能描述: |
| TISP4165H4BJR-S | 功能描述:硅对称二端开关元件 RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TISP4165H4BJ-S | 制造商:BOURNS 制造商全称:Bourns Electronic Solutions 功能描述:HIGH HOLDING CURRENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP4165J1 | 制造商:BOURNS 制造商全称:Bourns Electronic Solutions 功能描述:BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP4165J1BJR | 功能描述:硅对称二端开关元件 RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
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