参数资料
| 型号： | TISP61089QBDR-S |
| 厂商： | Bourns Inc. |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | SURGE SUPP QUAD PROG SMD |
| 标准包装： | 1 |
| 电压 - 击穿： | 64V |
| 电压 - 断路： | 170V |
| 电流 - 峰值脉冲(10 x 1000µs)： | 30A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 4 |
| 电容： | 100pF |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 标准包装 |
| 其它名称： | TISP61089QBDR-S-6 |
TISP61089QB
PROGRAMMABLE OVERVOLTAGE PROTECTOR
QUAD FORWARD-CONDUCTING P-GATE THYRISTOR
TISP61089QB SLIC Overvoltage Protector
Quad Voltage-Programmable Protector
- Wide -20 V to -155 V Programming Range
D Package (Top View)
- Low 5 mA max. Gate Triggering Current
- High 150 mA min. Holding Current
- Rated for ITU-T and YD/T-950 10/700 impulses
- Rated for Telcordia Intra-building impulses
K1
G1,G2
G3,G4
1
2
3
8
7
6
K2
A
A
10/700 Protection Voltage Speci?ed
K3
4
5
K4
MDRXAN
Element
Diode
Crowbar
V GG = -48 V
Protection Level
40 A, 5/310
+12
-64
Device Symbol
K1
G1,G2
Description
Bourns ? TISP61089QB is a quad forward-conducting buffered p-gate
overvoltage protector. It is designed to protect monolithic SLICs
(Subscriber Line Interface Circuits) against overvoltages on the tele-
phone line caused by lightning, a.c. power contact and induction. The
TISP61089QB limits voltages that exceed the SLIC supply rail voltage.
The TISP61089QB parameters are speci?ed to allow equipment compli-
ance with Telcordia GR-1089-CORE Intra-building, ITU-T K.20, K.21 and
K.45 and YD/T-950.
The SLIC line driver section is typically powered from 0 V (ground) and a
negative voltage in the region of -20 V to -155 V. The protector gate is
connected to this negative supply. This references the protection
(clipping) voltage to the negative supply voltage. As the protection
voltage will then track the negative supply voltage the overvoltage stress
on the SLIC is minimized.
K2
A
A
K3
G3,G4
K4
SDRXAIA
Positive overvoltages are clipped to ground by diode forward conduction.
Negative overvoltages are initially clipped close to the SLIC negative supply
rail value. If suf?cient current is available from the overvoltage, then the protector will crowbar into a low voltage on-state condition. As the
overvoltage subsides, the high holding current of the crowbar helps prevent d.c. latchup.
These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and are virtually
transparent in normal operation. The TISP61089QB buffered gate design reduces the loading on the SLIC supply during overvoltages caused
by power cross and induction. The TISP61089QB is available in an 8-pin plastic small-outline surface mount package.
How to Order
Device
TI SP61089QB
Package
8 Pin Small Outline (D008)
Carrier
Embossed Tape Reeled
Order As
TISP61089QBDR-S
Marking Code
1089QB
Standard Quantity
2500
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
JULY 2010 - REVISED MAY 2012
Speci?cations are subject to change without notice.
Customers should verify actual device performance in their speci?c applications.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TISP61089QDR-S | 功能描述:SCR Quad programmable Thyristor RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089S | 制造商:POINN 制造商全称:Power Innovations Ltd 功能描述:DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61089SD | 制造商:BOURNS 制造商全称:Bourns Electronic Solutions 功能描述:DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61089SDR | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089SDR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
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