参数资料
| 型号： | TISP61089QBDR-S |
| 厂商： | Bourns Inc. |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | SURGE SUPP QUAD PROG SMD |
| 标准包装： | 1 |
| 电压 - 击穿： | 64V |
| 电压 - 断路： | 170V |
| 电流 - 峰值脉冲(10 x 1000µs)： | 30A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 4 |
| 电容： | 100pF |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 标准包装 |
| 其它名称： | TISP61089QBDR-S-6 |
TISP61089QB SLIC Overvoltage Protector
Absolute Maximum Ratings, T J = 25 °C (Unless Otherwise Noted)
R a t i n g
S y m b o l
V a l u e
U n i t
Repetitive peak off-state voltage, I G = 0
- 4 0 ° C ≤ T J ≤ 85 °C
V DRM
-170
V
Repetitive peak gate-cathode voltage, V KA = 0
- 4 0 ° C ≤ T J ≤ 85 °C V GKRM
-167
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
10/1000 μs (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4)
5/310 μs (ITU-T K.20/21/45, YD/T-950, open circuit voltage waveshape 10/700)
2/40 μs (IEC61000-4-5, 1.2/50 μs open circuit voltage, 2 ohm + 10 ohm, see Note 4)
2/10 μs (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4)
Non-repetitive peak on-state current, 60 Hz (see Notes 1, 2 and 3)
900 s
Non-repetitive peak gate current, 2/10 μs pulse, cathodes commoned (see Notes 1 and 2)
Junction temperature
Storage temperature range
I TSP
I TSM
I GSM
T J
T stg
30
40
85
120
0.5
40
-40 to +150
-40 to +150
A
A
A
°C
°C
NOTES: 1. Initially the protector must be in thermal equilibrium with T J = 25 °C. The surge may be repeated after the device returns to its initial
conditions.
2. These non-repetitive rated currents are peak values for either polarity. The rated current values may be applied to any cathode-
anode terminal pair. Additionally, all cathode-anode terminal pairs may have their rated current values applied simultaneously (in
this case the anode terminal current will be four times the rated current value of an individual terminal pair).
3. EIA/JESD51-2 environment and EIA/JESD51-7 high effective thermal conductivity test board (multi-layer) connected with 0.6 mm
printed wiring track widths.
4. Combination wave generator as specified in ITU-T K.20, K.21, K.44.
Recommended Operating Conditions
C G Gate decoupling capacitor
Min
Typ
100
Max
Unit
nF
Electrical Characteristics, TJ = 25 °C (Unless Otherwise Noted)
P a r a m e t e r
T e s t C o n d i t i o n s
M i n
T y p
M a x
U n i t
I D
V (BO)
V F
V FRM
I H
I GAS
I GT
V GT
Off-state current
Breakover voltage
Forward voltage
Peak forward recovery
voltage
Holding current
Gate reverse current
Gate trigger current
Gate trigger voltage
V D = V DRM , V GK = 0
10/700 μs, I T = -40 A, R S = 55 ?, V GG = -48 V, C G = 1 0 0 n F
I F = 5 A, t w = 200 μs
10/700 μs, I F = 40 A, R S = 55 ? , V GG = -48 V, C G = 1 0 0 n F
I T = -1 A, di/dt = 1 A/ms, V GG = - 100 V
V GG = V GK = V GKRM , V KA = 0
I T = 3 A, t p(g) ≥ 20 μs, V GG = - 100 V
I T = 3 A, t p(g) ≥ 20 μs, V GG = - 100 V
- 1 5 0
1 2
-5
- 6 4
3
- 5
5
2 . 5
μA
V
V
V
m A
μ A
m A
V
C AK
Anode-cathode off-state
capacitance
f = 1 MHz, V d = 1 V I G = 0, (see Note 5)
V D = -3 V
V D = -48 V
100
50
pF
NOTE:
5. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
JULY 2010 - REVISED MAY 2012
Speci?cations are subject to change without notice.
Customers should verify actual device performance in their speci?c applications.
相关PDF资料 |
PDF描述 |
|---|---|
| TB3500M-13-F | THYRISTOR PROTECT BIDIR 50A SMB |
| TB1500L-13-F | THYRISTOR PROTECT BIDIR 30A SMB |
| TB0720L-13 | THYRISTOR PROTECT BI-DIR 30A SMB |
| 929850-01-05-RA | CONN RECEPT .100 SNGL STR 5POS |
| 929850-01-05-10 | CONN RECEPT .100 SNGL STR 5POS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TISP61089QDR-S | 功能描述:SCR Quad programmable Thyristor RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089S | 制造商:POINN 制造商全称:Power Innovations Ltd 功能描述:DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61089SD | 制造商:BOURNS 制造商全称:Bourns Electronic Solutions 功能描述:DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61089SDR | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089SDR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。