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参数资料
| 型号： | TLV5510IPWR |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | ADC |
| 英文描述： | 1-CH 8-BIT FLASH METHOD ADC, PARALLEL ACCESS, PDSO24 |
| 封装： | PLASTIC, TSSOP-24 |
| 文件页数： | 14/20页 |
| 文件大小： | 330K |
| 代理商： | TLV5510IPWR |
TLV5510
2.7-V TO 3.6-V 8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTER
SLAS124C– DECEMBER 1997 – REVISED DECEMBER 1999
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
recommended operating conditions
MIN
NOM
MAX
UNIT
VDDA – AGND
2.7
3
3.6
V
Supply voltage
VDDD – DGND
2.7
3
3.6
V
AGND – DGND
– 100
0
100
mV
Reference input voltage (top), REFT
REFB+2
VDDA–0.3
V
Reference input voltage (bottom), REFB
0
0.6
REFT– 2
V
Analog input voltage range, VI(ANLG) (see Note 1)
REFB
REFT
V
High-level input voltage, VIH
2.5
V
Low-level input voltage, VIL
0.5
V
Pulse duration, clock high, tw(H)
10
ns
Pulse duration, clock low, tw(L)
10
ns
Clock frequency, f(CLK)
10
MHz
Sampling frequency, fs
10
MSPS
NOTE 1: REFT – REFB
≤ 2.4 V maximum
electrical characteristics at VDDD = VDDA = 3 V, REFT = 2.5 V, REFB = 0.5 V, f(CLK) = 10 MHz,
TA = 25°C (unless otherwise noted)
digital I/O
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IIH
High-level input current
VDDD = MAX,
VIH = VDDD
5
A
IIL
Low-level input current
VDDD = MAX,
VIL = 0
5
A
IOH
High-level output current
OE = GND,
VDDD = MIN,
VOH = VDDD – 0.5 V
– 1.6
mA
IOL
Low-level output current
OE = GND,
VDDD = MIN,
VOL = 0.4 V
2.6
mA
IOZH
High-level high-impedance-state
output leakage current
OE = VDDD,
VDDD = MAX
VOH = VDDD
15
A
IOZL
Low-level high-impedance-state
output leakage current
OE = VDDD,
VDDD = MIN
VOL = 0
15
A
Conditions marked MIN or MAX are as stated in recommended operating conditions.
power
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IDD
Supply current
fsin = 1 MHz sine wave, reference resistor dissipation is separate
4
10
mA
Iref
Reference voltage current
REF = REFT – REFB = 2 V
6
10
14
mA
Conditions marked MIN or MAX are as stated in recommended operating conditions.
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