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参数资料
型号： TMP86C847UG
厂商： Toshiba Corporation
英文描述： Zener Diode; Application: General; Pd (mW): 500; Vz (V): 15.7 to 16.5; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
中文描述： 8位微控制器
文件页数： 156/160页
文件大小： 1541K
代理商： TMP86C847UG
Page 148
15. Electrical Characteristics
15.6 Recommended Oscillating Conditions
TMP86C847UG
15.6 Recommended Oscillating Conditions
Note 1: A quartz resonator can be used for high-frequency oscillation only when V
DD
is 2.7 V or above. If V
DD
is below 2.7
V, use a ceramic resonator.
Note 2: To ensure stable oscillation, the resonator position, load capacitance, etc. must be appropriate. Because these
factors are greatly affected by board patterns, please be sure to evaluate operation on the board on which the
device will actually be mounted.
Note 3: For the resonators to be used with Toshiba microcontrollers, we recommend ceramic resonators manufactured by
Murata Manufacturing Co., Ltd.
For details, please visit the website of Murata at the following URL:
http://www.murata.com
15.7 Handling Precaution
- The solderability test conditions for lead-free products (indicated by the suffix G in product name) are shown
below.
1. When using the Sn-37Pb solder bath
Solder bath temperature = 230
°
C
Dipping time = 5 seconds
Number of times = once
R-type flux used
2. When using the Sn-3.0Ag-0.5Cu solder bath
Solder bath temperature = 245
°
C
Dipping time = 5 seconds
Number of times = once
R-type flux used
Note: The pass criteron of the above test is as follows:
Solderability rate until forming
≥
95 %
- When using the device (oscillator) in places exposed to high electric fields such as cathode-ray tubes, we
recommend electrically shielding the package in order to maintain normal operating condition.
相关PDF资料
PDF描述
TMP86CH06AUG Zener Diode; Application: General; Pd (mW): 200; Vz (V): 3.87 to 4.10; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
TMP86CH09NG Zener Diode; Application: General; Pd (mW): 200; Vz (V): 34.00 to 38.00; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
TMP86CH12MG Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.01 to 4.48; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
TMP86CH21AUG Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.01 to 4.21; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
TMP86CH22UG Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.15 to 4.34; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
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