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参数资料
| 型号： | TPS3613-01DGST |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 电源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO10 |
| 封装： | PLASTIC, MSOP-10 |
| 文件页数： | 5/10页 |
| 文件大小： | 142K |
| 代理商： | TPS3613-01DGST |
TPS3613-01
ADJUSTABLE BATTERY-BACKUP SUPERVISOR
FOR RAM RETENTION
SLVS340 – DECEMBER 2000
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TERMINAL
I/O
DESCRIPTION
NAME
NO.
CEIN
5
I
Chip-enable input
CEOUT
6
O
Chip-enable output
GND
3
I
Ground
MR
4
I
Manual reset input
RESET
7
O
Active-high reset output
RESET
9
O
Active-low reset output
SENSE
8
I
Adjustable sense input
VBAT
10
I
Backup-battery input
VDD
2
I
Input supply voltage
VOUT
1
O
Supply output
detailed description
backup-battery switchover
In case of a brownout or power failure, it may be necessary to preserve the contents of RAM. If a backup battery
is installed at VBAT, the device automatically switches the connected RAM to backup power when VDD fails. In
order to allow the backup battery (e.g., 3.6-V lithium cells) to have a higher voltage than VDD, these supervisors
will not connect VBAT to VOUT when VBAT is greater than VDD. VBAT only connects to VOUT (through a 15-
switch) when VDD falls below VIT and VBAT is greater than VDD. When VDD recovers, switchover is deferred
either until VDD crosses VBAT, or when VDD rises above the reset threshold VIT. VOUT will connect to VDD through
a 1-
(max) PMOS switch when VDD crosses the reset threshold.
VDD>VBAT
VDD>VIT
VOUT
1
VDD
1
0
VDD
0
1
VDD
0
VBAT
VDD – Mode
VBAT – Mode
VBSW Hysteresis
VIT Hysteresis
VBAT – Backup-Battery Supply Voltage
–
Normal
Supply
V
oltage
V
DD
Undefined
Figure 1. VDD – VBAT Switchover
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