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参数资料
| 型号： | TPS3619-33DGKR |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 电源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8 |
| 封装： | 3.05 X 4.98 MM, GREEN, PLASTIC, MSOP-8 |
| 文件页数： | 12/17页 |
| 文件大小： | 494K |
| 代理商： | TPS3619-33DGKR |
www.ti.com
TIMING REQUIREMENTS
SWITCHING CHARACTERISTICS
SLVS387H – APRIL 2001 – REVISED DECEMBER 2007
ELECTRICAL CHARACTERISTICS (continued)
Over recommended operating conditions (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IIH
High-level input current
MR = 0.7 x VDD
–33
–76
MR
VDD = 5 V
A
IIL
Low-level input current
MR = 0 V
–110
–255
II
Input current
PFI
–25
25
nA
VDD = 1.8 V
–0.3
IOS
Short-circuit current
PFO
PFO = 0 V
VDD = 3.3 V
–1.1
mA
VDD = 5 V
–2.4
VOUT = VDD
40
IDD
VDD supply current
A
VOUT = VBAT
40
VOUT = VDD
–0.1
0.1
I(BAT)
VBAT supply current
A
VOUT = VBAT
0.5
Ci
Input capacitance
VI = 0 V to 5 V
5
pF
At RL = 1 M, CL = 50 pF, TA = –40°C to +85°C.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
at VDD
VIH = VIT + 0.2 V, VIL = VIT – 0.2 V
6
s
tw
Pulse width
at MR
VDD = VIT + 0.2 V, VIL = 0.3 x VDD, VIH = 0.7 x VDD
100
ns
At RL = 1 M, CL= 50 pF, TA= –40°C to +85°C.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VDD ≥ VIT+ 0.2 V, MR ≥ 0.7 x VDD
td
Delay time
60
100
140
ms
See timing diagram
VDD to RESET
VIL = VIT – 0.2 V, VIH = VIT + 0.2 V
2
5
Propagation (delay) time,
PFI to PFO delay
VIL = VPFI – 0.2 V, VIH = VPFI + 0.2 V
3
5
tPHL
s
high-to-low level output
VDD ≥ VIT+ 0.2 V, VIL= 0.3 x VDD,
0.1
1
MR to RESET
VIH = 0.7 x VDD
4
Copyright 2001–2007, Texas Instruments Incorporated
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| TPS3619-33DGKRG4 | 功能描述:监控电路 Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| TPS3619-33-EP | 制造商:TI 制造商全称:Texas Instruments 功能描述:BACKUP-BATTERY SUPERVISORS FOR RAM RETENTION |
| TPS3619-33MDGKREP | 功能描述:监控电路 Mil Enhance Backup- Batt Sup RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| TPS3619-50 | 制造商:TI 制造商全称:Texas Instruments 功能描述:BACKUP-BATTERY SUPERVISORS FOR RAM RETENTION |
| TPS3619-50DGK | 功能描述:监控电路 Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
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