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参数资料
| 型号： | TPS3619-33DGKR |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 电源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8 |
| 封装： | 3.05 X 4.98 MM, GREEN, PLASTIC, MSOP-8 |
| 文件页数： | 17/17页 |
| 文件大小： | 494K |
| 代理商： | TPS3619-33DGKR |
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0
0.5
1
1.5
2
2.5
3
3.5
0
5
10
15
20
25
TA = 25°C
TA = 85°C
TA = 0°C
TA = 40°C
Low-Level
Output
V
oltage
at
RESET
V
OL
IOL Low-Level Output Current mA
VDD = 3.3 V
VBAT = GND
0
100
200
300
400
500
0
1
2
3
4
5
TA = 40°C
TA = 25°C
TA = 85°C
TA = 0°C
Low-Level
Output
V
oltage
at
RESET
mV
V
OL
IOL Low-Level Output Current mA
VDD = 3.3 V
VBAT = GND
Expanded View
0
1
2
3
4
5
6
7
8
9
10
0
0.1
0.2
0.3
0.4 0.5
0.6
0.7
0.8
0.9
Minimum
Pulse
Duration
at
V
DD
Threshold Overdrive at VDD V
1
s
0.6
1
1.4
1.8
2.2
2.6
3
3.4
3.8
4.2
4.6
5
0
0.1
0.2
0.3
0.4
0.5
0.6 0.7 0.8
0.9
1
Minimum
Pulse
Duration
at
PFI
Threshold Overdrive at PFI V
VDD = 1.65 V
s
SLVS387H – APRIL 2001 – REVISED DECEMBER 2007
TYPICAL CHARACTERISTICS (continued)
LOW-LEVEL OUTPUT VOLTAGE AT RESET
vs
LOW-LEVEL OUTPUT CURRENT
Figure 9.
Figure 10.
MINIMUM PULSE DURATION AT VDD
MINIMUM PULSE DURATION AT PFI
vs
THRESHOLD OVERDRIVE AT VDD
THRESHOLD OVERDRIVE AT PFI
Figure 11.
Figure 12.
Copyright 2001–2007, Texas Instruments Incorporated
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相关代理商/技术参数 |
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|---|---|
| TPS3619-33DGKRG4 | 功能描述:监控电路 Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| TPS3619-33-EP | 制造商:TI 制造商全称:Texas Instruments 功能描述:BACKUP-BATTERY SUPERVISORS FOR RAM RETENTION |
| TPS3619-33MDGKREP | 功能描述:监控电路 Mil Enhance Backup- Batt Sup RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| TPS3619-50 | 制造商:TI 制造商全称:Texas Instruments 功能描述:BACKUP-BATTERY SUPERVISORS FOR RAM RETENTION |
| TPS3619-50DGK | 功能描述:监控电路 Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
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