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| 型号： | TPS40061PWPG4 |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 稳压器 |
| 英文描述： | SWITCHING CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, PDSO16 |
| 封装： | GREEN, PLASTIC, HTSOOP-16 |
| 文件页数： | 9/33页 |
| 文件大小： | 750K |
| 代理商： | TPS40061PWPG4 |
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AMOD(f) + AMOD
f
LC
f
C
2
and
G +
1
AMOD(f)
(27)
R2
(MIN) +
V
C (max)
I
SOURCE (min)
(W) +
3.45 V
2.0 mA +
1.725 kW
(28)
dv/dt INDUCED TURN-ON
HIGH-SIDE MOSFET POWER DISSIPATION
P
COND + IRMS
2
R
DS(on)
1 ) TCR
T
J * 25
O
C
(W)
(29)
I
RMS + IO
d
Amperes
RMS
(30)
P
SW(fsw) + VIN
I
OUT
t
SW
f
SW (Watts)
(31)
SLUS543E – DECEMBER 2002 – REVISED JUNE 2006
APPLICATION INFORMATION (continued)
Care must be taken not to load down the output of the error amplifier with the feedback resistor, R2, that is too
small. The error amplifier has a finite output source and sink current which must be considered when sizing R2.
Too small a value does not allow the output to swing over its full range.
MOSFETs are susceptible to dv/dt turn-on particularly in high-voltage (VDS) applications. The turn-on is caused
by the capacitor divider that is formed by CGD and CGS. High dv/dt conditions and drain-to-source voltage, on the
MOSFET causes current flow through CGD and causes the gate-to-source voltage to rise. If the gate-to-source
voltage rises above the MOSFET threshold voltage, the MOSFET turns on, resulting in large shoot-through
currents. Therefore the SR MOSFET should be chosen so that the CGD capacitance is smaller than the CGS
capacitance. A 2-
to 5- resistor in the upper MOSFET gate lead shapes the turn-on and dv/dt of the SW node
and helps reduce the induced turn-on.
The power dissipated in the external high-side MOSFET is comprised of conduction and switching losses. The
conduction losses are a function of the IRMS current through the MOSFET and the RDS(on) of the MOSFET. The
high-side MOSFET conduction losses are defined by Equation 29.
where:
TC
R is the temperature coefficient of the MOSFET RDS(on)
The TCR varies depending on MOSFET technology and manufacturer but is typically ranges between 0.0035
ppm/°C and 0.010 ppm/°C.
The switching losses for the high-side MOSFET are descibed in Equation 31.
where:
I
O is the DC output current
t
SW is the switching rise time, typically < 20 ns
f
SW is the switching frequency
Typical switching waveforms are shown in Figure 12.
17
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