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参数资料
| 型号： | TPS40195PWG4 |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 稳压器 |
| 英文描述： | SWITCHING CONTROLLER, 580 kHz SWITCHING FREQ-MAX, PDSO16 |
| 封装： | GREEN, PLASTIC, TSSOP-16 |
| 文件页数： | 17/43页 |
| 文件大小： | 1086K |
| 代理商： | TPS40195PWG4 |
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f
GATE
g(TOT)
g
SW
P
Q
V
=
(18)
GATE
SW
CON
QSW
P
+
=
(19)
(
)
(
)
(
)
2
RIPPLE
OUT
CON
DS(on)
QSW(rms)
DS(on)
OUT
IN
I
V
P
R
I
R
I
V
12
÷
=
=
+
÷
è
(20)
(
)
f
RIPPLE
OUT
gs1
gd
SW
IN
S
g
I
Q
2
P
V
I
é
ù
+
+
ê
ú
÷
è
ê
ú
=
ê
ú
ê
ú
(21)
QSR
CON
BD
GATE
P
=
+
(22)
(
)
(
)
(
)
2
RIPPLE
OUT
CON
DS(on)
QSW(rms)
DS(on)
OUT
IN
I
V
P
R
I
R
I
V
12
÷
=
=
+
÷
è
(23)
f
GATE
g(TOT)
g
SW
P
Q
V
=
(
) f
BD
f
OUT
1
2
S
P
V
I
t
=
+
(24)
SLUS720D – FEBRUARY 2007 – REVISED NOVEMBER 2008 ........................................................................................................................................ www.ti.com
where
P
CON is conduction losses
P
SW is switching losses
P
GATE is gate drive losses
Q
gd is drain source charge or miller charge
Q
gs1 is gate source post threshold charge
I
g is gate drive current
Q
g(TOT) is total gate charge from 0 V to the gate voltage
V
g is gate voltage
Equation 22 and Equation 23 describe the preliminary values for RDS(on) and (Qgs1 + Qgd). Note output losses due
to QOSS and gate losses have been ignored here. Once a MOSFET is selected these parameters can be added.
The switching MOSFET for this design should have an RDS (on) of less than 20 m . The sum of Qgd and Qgs1
should be approximately 14.8 nC. . The Vishay SI7860ADP was selected for this design. This device has an
RDS(on) of 9 m and a (Qgs1+Qgd) of 13 nC. The estimated conduction losses are 0.135 W and the switching
losses are 0.297 W. This gives a total estimated power loss of 0.432 W versus 0.6 W for our initial boundary
condition. Note this does not include gate losses of approximately 10 mW.
Rectifier MOSFET, QSR
Similar criteria as used above apply to the rectifier MOSFET. One significant difference however, is that the
rectifier MOSFET switches with nearly zero voltage across its drain and source so its switching losses are nearly
zero. There are losses from the source to drain body diode that occur as it conducts during the delay before the
FET turns on. The equations used to calculate the losses in the rectifier MOSFET are shown below.
where
P
BD is the body diode loss
t
1 is the body diode conduction prior to turn-on of channel (57nS)
t
2 is the body diode conduction after turn-off of channel (14nS)
V
f is the body diode forward voltage
24
Copyright 2007–2008, Texas Instruments Incorporated
Product Folder Link(s): TPS40195
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相关代理商/技术参数 |
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| TPS40195PWR | 功能描述:DC/DC 开关控制器 4.5V to 20V Buck RoHS:否 制造商:Texas Instruments 输入电压:6 V to 100 V 开关频率: 输出电压:1.215 V to 80 V 输出电流:3.5 A 输出端数量:1 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:CPAK |
| TPS40195PWRG4 | 功能描述:DC/DC 开关控制器 4.5V-20V Buck Cntrlr RoHS:否 制造商:Texas Instruments 输入电压:6 V to 100 V 开关频率: 输出电压:1.215 V to 80 V 输出电流:3.5 A 输出端数量:1 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:CPAK |
| TPS40195RGYR | 功能描述:DC/DC 开关控制器 4.5V-20V Buck Cntrlr RoHS:否 制造商:Texas Instruments 输入电压:6 V to 100 V 开关频率: 输出电压:1.215 V to 80 V 输出电流:3.5 A 输出端数量:1 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:CPAK |
| TPS40195RGYRG4 | 功能描述:DC/DC 开关控制器 4.5V-20V Buck Cntrlr RoHS:否 制造商:Texas Instruments 输入电压:6 V to 100 V 开关频率: 输出电压:1.215 V to 80 V 输出电流:3.5 A 输出端数量:1 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:CPAK |
| TPS40195RGYT | 功能描述:DC/DC 开关控制器 4.5V-20V Buck Cntrlr RoHS:否 制造商:Texas Instruments 输入电压:6 V to 100 V 开关频率: 输出电压:1.215 V to 80 V 输出电流:3.5 A 输出端数量:1 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:CPAK |
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