参数资料
型号: TPS40197RGYR
厂商: TEXAS INSTRUMENTS INC
元件分类: 稳压器
英文描述: SWITCHING CONTROLLER, 520 kHz SWITCHING FREQ-MAX, PQCC16
封装: PLASTIC, MO-241BB, VQFN-16
文件页数: 26/30页
文件大小: 931K
代理商: TPS40197RGYR
TI Information — Selective Disclosure
www.ti.com
SLUS886 – NOVEMBER 2008
ELECTRICAL CHARACTERISTICS (continued)
–40°C
≤ TJ ≤ 85°C, VVDD = 12 V, all parameters at zero power dissipation (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OUTPUT DRIVERS
High-side driver pull-up
RHDHI
(VBOOT – VSW ) - 4.5 V, IHDR V = – 100 mA
3.0
6.0
resistance
High-side driver pull-down
RHDLO
(VBOOT – VSW ) - 4.5 V, IHDR V = 100 mA
1.5
3.0
resistance
RLDHI
Low-side driver pull-up resistance
ILDR V = –100 mA
2.5
5.0
Low-side driver pull-down
RLDLO
ILDR V = 100 mA
0.8
1.5
resistance
tHRISE
(2)
High-side driver rise time
15
35
tHFALL
(2)
High-side driver fall time
10
25
CLOAD = 1 nF
ns
tLRISE
(2)
Low-side driver rise time
15
35
tLFALL
(2)
Low-side driver fall time
10
25
SHORT CIRCUIT PROTECTION
Minimum pulse time during short
tPSS(min)
(2)
250
circuit
ns
Switch leading-edge blanking
tBLNK
(2)
60
90
120
pulse time
tOFF
Off-time between restart attempts
30
50
ms
RCOMP(GND) = OPEN, TJ = 25°C
160
200
240
Short circuit comparator threshold
VILIM
RCOMP(GND) = 4 k, TJ = 25°C
80
100
120
voltage
mV
RCOMP(GND) = 12 k, TJ = 25°C
228
280
342
Short circuit threshold voltage on
VILIMH
TJ = 25°C
400
550
650
high-side MOSFET
POWER GOOD
VOV
106%
110%
114%
Feedback voltage limit for
VID
powergood
VUV
86%
90%
94%
Powergood hysteresis voltage at
VPG_HYST
10
30
70
mV
FB pin
RPGD
Pull-down resistance of PGD pin
VFB < 90% VVID mV or VFB > 110% VVID
7
50
IPDGLK
Leakage current
90% VVID ≤ VFB ≤ 100% VVID, VPGOOD = 5 V
7
12
mA
BOOT DIODE
VDFWD
IBOOT = 5 mA
0.5
0.8
1.2
V
THERMAL SHUTDOWN
TJSD
(2)
Junction shutdown temperature
140
°C
TJSDH
(2)
Hysteresis
20
(2)
Specified by design. Not production tested.
Copyright 2008, Texas Instruments Incorporated
5
Product Folder Link(s): TPS40197
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