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参数资料
| 型号： | TPS54620RGYR |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 稳压器 |
| 英文描述： | 11 A SWITCHING REGULATOR, 1760 kHz SWITCHING FREQ-MAX, PQCC14 |
| 封装： | 3.50 X 3.50 MM, GREEN, PLASTIC, MO-241BA, VQFN-14 |
| 文件页数： | 23/44页 |
| 文件大小： | 1827K |
| 代理商： | TPS54620RGYR |
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SLVS949C
– MAY 2009 – REVISED MAY 2011
PACKAGE DISSIPATION RATINGS
(1) (2) (3) (4)
THERMAL IMPEDANCE
θJP THERMAL IMPEDANCE
ψJT THERMAL CHARACTERISTIC
PACKAGE
JUNCTION TO AMBIENT
JUNCTION TO EXPOSED
JUNCTION TO TOP
THERMAL PAD
RHL/RGY
32
°C/W
5.2
°C/W
5
°C/W
(1)
Maximum power dissipation may be limited by overcurrent protection
(2)
Power rating at a specific ambient temperature TA should be determined with a junction temperature of 150°C. This is the point where
distortion starts to substantially increase. Thermal management of the PCB should strive to keep the junction temperature at or below
150
°C for best performance and long-term reliability. See power dissipation estimate in application section of this data sheet for more
information.
(3)
Test board conditions:
(a) 2.5 inches
× 2.5 inches, 4 layers, thickness: 0.062 inch
(b) 2 oz. copper traces located on the top of the PCB
(c) 2 oz. copper ground planes on the 2 internal layers and bottom layer
(d) 4 0.010 inch thermal vias located under the device package
(4)
For information on thermal characteristics see SPRA953A
ELECTRICAL CHARACTERISTICS
TJ = –40°C to 150°C, VIN = 4.5V to 17V, PVIN = 1.6V to 17V (unless otherwise noted)
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY VOLTAGE (VIN AND PVIN PINS)
PVIN operating input voltage
1.6
17
V
VIN operating input voltage
4.5
17
V
VIN internal UVLO threshold
VIN rising
4.0
4.5
V
VIN internal UVLO hysteresis
150
mV
VIN shutdown supply Current
EN = 0 V
2
5
μA
VIN operating
– non switching supply current
VSENSE = 810 mV
600
800
μA
ENABLE AND UVLO (EN PIN)
Enable threshold
Rising
1.21
1.26
V
Enable threshold
Falling
1.10
1.17
Input current
EN = 1.1 V
1.15
μA
Hysteresis current
EN = 1.3 V
3.4
μA
VOLTAGE REFERENCE
Voltage reference
0 A
≤ IOUT ≤ 6 A
0.792
0.800
0.808
V
MOSFET
High-side switch resistance
BOOT-PH = 3 V
32
60
m
High-side switch resistance(1)
BOOT-PH = 6 V
26
40
m
Low-side Switch Resistance(1)
VIN = 12 V
19
30
m
ERROR AMPLIFIER
Error amplifier Transconductance (gm)
–2 μA < ICOMP < 2 μA, V(COMP) = 1 V
1300
μMhos
Error amplifier dc gain
VSENSE = 0.8 V
1000
3100
V/V
Error amplifier source/sink
V(COMP) = 1 V, 100 mV input overdrive
±110
μA
Start switching threshold
0.25
V
COMP to Iswitch gm
16
A/V
CURRENT LIMIT
High-side switch current limit threshold
8
11
A
Low-side switch sourcing current limit
7
10
A
Low-side switch sinking current limit
2.3
A
(1)
Measured at pins
Copyright
2009–2011, Texas Instruments Incorporated
3
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