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| 型号： | TPS65055RSMR |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 稳压器 |
| 英文描述： | 1.8 A DUAL SWITCHING CONTROLLER, 2475 kHz SWITCHING FREQ-MAX, PQCC32 |
| 封装： | 4 X 4 MM, GREEN, PLASTIC, QFN-32 |
| 文件页数： | 37/41页 |
| 文件大小： | 1276K |
| 代理商： | TPS65055RSMR |
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www.ti.com.......................................................................................................................................................................................... SLVS844 – SEPTEMBER 2008
ELECTRICAL CHARACTERISTICS (continued)
VIN = 3.6 V, EN = VIN, MODE = GND, L = 2.2 H, COUT = 22 F, TA = –40°C to 85°C, Typical values are at TA = 25°C (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OUTPUT
VOUT
Output voltage range
0.8
VIN
V
VIN = 2.5 V to 6 V, Mode = GND,
–1.5
0
3.5
%
PFM operation, 0 mA < IOUT < IOUTMAX
DCDC1,
VOUT
DC output voltage accuracy
DCDC2(1)
VIN = 2.5 V to 6 V, Mode = VIN,
–1.5
0
1.5
%
PWM operation, 0 mA < IOUT < IOUTMAX
ΔVOUT
Power save mode ripple voltage(2)
IOUT = 1 mA, PFM = GND, Bandwidth = 20 MHz
25
mVPP
tStart
Start-up time
Time from active EN to start switching
170
s
tRamp
VOUT Ramp up time
Time to ramp from 5% to 95% of VOUT
750
s
RDIS
Internal discharge resistor at L1, L2
350
VOL
RST, DPD, discharge output low voltage
IOL = 1 mA, Vthreshold < 0.8 V
0.3
V
RST, DPD sink current
1
mA
IOL
discharge sink current
10
mA
Vthreshold > 0.8 V, RST and DPD outputs turned off (internal
RST, DPD, discharge output leakage current
0.01
1.0
A
NMOS in high impedance state)
Vth
Vthreshold voltage
Voltage rising
0.78
0.8
0.82
V
Hysteresis on threshold
Voltage decreasing
80
mV
VLDO1, VLDO2, VLDO3 and VLDO4 LOW DROPOUT REGULATORS
Input voltage range for LDO1, LDO2, LDO3,
VINLDO
1.5
6.5
V
LDO4
VLDO1
LDO1 output voltage range
0.8
2.8
V
VLDO2
LDO2 output voltage range
1.2
3.0
V
VLDO3
LDO3 output voltage
0.8
2.8
V
VLDO4
LDO4 output voltage range
1.2
3.0
V
Maximum output current for LDO1,LDO2
400
IO
mA
Maximum output current for LDO3, LDO4
200
LDO1 and LDO2 short-circuit current limit
VLDO1 = GND, VLDO2 = GND
800
mA
I(SC)
LDO3 and LDO4 short-circuit current limit
VLDO3 = GND, VLDO4 = GND
400
mA
Dropout voltage at LDO1
IO = 250 mA, VINLDO = 1.8 V
600
mV
Dropout voltage at LDO2
IO = 400 mA, VINLDO = 3.3 V
450
mV
Dropout voltage at LDO3, LDO4
IO = 200 mA, VINLDO = 1.8 V
280
mV
Output voltage accuracy for LDO1, LDO2,
IO = 10 mA
–2%
1%
LDO3
Leakage current from VINLDOx to VLDOx
LDO enabled, VINLDOx = 6.5 V; VO = 1.0 V, T = 140°C
3
A
Output voltage accuracy for LDO1, LDO2,
IO = 10 mA
–2%
1%
LDO3, LDO4
VINLDO1,2 = VLDO1,2 + 0.5 V (min. 2.5 V) to 6.5 V,
Line regulation for LDO1, LDO2, LDO3, LDO4
VINLDO3,4 = VLDO3,4 + 0.5 V (min. 2.5 V) to 6.5 V,
–1%
1%
IO = 10 mA
IO = 0mA to 400 mA for LDO1, LDO2
Load regulation for LDO1, LDO2, LDO3, LDO4
–1%
1%
IO = 0mA to 200 mA for LDO3, LDO4
Regulation time for LDO1, LDO2, LDO3, LDO4
Load change from 10% to 90%
10
s
PSRR
Power supply rejection ratio
f = 10 kHz; IO = 50 mA; VI = VO + 1 V
70
dB
Internal discharge resistor at VLDO1, VLDO2,
RDIS
350
VLDO3, VLDO4
TSD
Thermal shutdown
Increasing junction temperature
140
°C
Thermal shutdown hysteresis
Decreasing junction temperature
20
°C
(1)
Output voltage specification does not include tolerance of external voltage programming resistors
(2)
In power save mode, PWM operation is typically entered at IPSM = VIN/32
Copyright 2008, Texas Instruments Incorporated
5
Product Folder Link(s): TPS65055
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