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参数资料
| 型号： | TPS65148RHBR |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 电源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PQCC32 |
| 封装： | 5 X 5 MM, GREEN, PLASTIC, QFN-32 |
| 文件页数： | 10/30页 |
| 文件大小： | 947K |
| 代理商： | TPS65148RHBR |
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VDPM
SW
VFLK
SUP
VIN
VS
VGH
VGHM
Re
Power Transistor
Boost Converter
Gate Voltage
Shaping
(GVS)
M1
M2
SW
AGND
PGND
External Positive
Charge Pump
RE
m
DPM
VDPM
ref
I
t
20
A
t
C
=
V
1.240 V
VFLK
VGHM
Slopesetby
Re
Delaysetby
VDPM
VFLK = “low”
VFLK = “high”
VGH
0V
Unknownstate
Boost
PowerGood
SLVS904A – MAY 2009 – REVISED JANUARY 2011
www.ti.com
GATE VOLTAGE SHAPING FUNCTION
Figure 22. Gate Voltage Shaping Block Diagram
The Gate Voltage Shaping is controlled by the flicker input signal VFLK, except during start-up where it is kept at
low state, whatever the VFLK signal is. The VGHM output is enabled once the VDPM voltage is higher than Vref
= 1.240 V. The capacitor connected to VDPM (C13 on Figure 27) pin sets the delay from the boost converter
Power Good (90% of its nominal value).
(10)
VFLK = 'high'
→ VGHM = VGH
VFLK = 'low'
→ VGHM discharges through Re resistor
The slope at which VGHM discharges is set by the external resistor connected to RE, the internal MOSFET rDS(on)
(typically 13
for M2 – see Figure 22) and by the external gate line capacitance connected to VGHM pin.
Figure 23. Gate Voltage Shaping Timing
18
Copyright 2009–2011, Texas Instruments Incorporated
Product Folder Link(s) :TPS65148
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