参数资料
型号: TRA2525
厂商: ON Semiconductor
文件页数: 4/8页
文件大小: 71K
描述: DIODE FAST REC 25A 250V BUTTON
产品变化通告: Product Discontinuation 02/Jan/2007
标准包装: 5,000
二极管类型: 标准
电压 - (Vr)(最大): 250V
电流 - 平均整流 (Io): 25A
电压 - 在 If 时为正向 (Vf)(最大): 1.18V @ 100A
速度: 标准恢复 >500ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 10µA @ 250V
安装类型: 表面贴装
封装/外壳: Microde 按钮
供应商设备封装: Microde 按钮
包装: 散装
TRA2525 MR3025
http://onsemi.com
4
Figure 6. Thermal Response
t, TIME (ms)
300
10
1
Figure 7. Typical Capacitance
VR, REVERSE VOLTAGE (V)
100
10
1
0.1
10
100
1000
Figure 8. Forward Recovery Time Figure 9. Reverse Recovery Time
IF, FORWARD CURRENT (A) IR/IF, RATIO OF REVERSE TO FORWARD CURRENT
10
1
0.1
1
10
1
0.1
1
10
100
C, CAPACITANCE (pF)
T
T
r(t), TRANSIENT THERMAL RESISTANCE
100
0.1
10±1
10±2
100
TJ
= 25
°C
, FORWARD RECOVERY TIME ( s)

FR
VFR
= 2.0 V
VFR
= 1.0 V
, REVERSE RECOVERY TIME ( s)

RR
IF
= 1 A
IF
= 10 A
RJC(t)
= R
JC
?
r(t)
Note 1
To determine maximum junction temperature of the diode in a given
situation, the following procedure is recommended.
The temperature of the case should be measured using a thermocou-
ple placed on the case at the temperature reference point (see the
outline drawing on page 1). The thermal mass connected to the case
is normally large enough so that it will not significantly respond to heat
surges generated in the diode as a result of pulse operation once
steady state conditions are achieved.
Using the measured value of TC, the junction temperature may be
determined by:
Where TJC
is the increase in junction temperature above the case
temperature, it may be determined by:
DUTY CYCLE, D = tp/t1
PEAK POWER, Ppk
is peak of an
equivalent square power pulse
Ppk
Ppk
tp
t1
where:
NOTE 1
TJ
= T
C
+
TJC
TJC
= P
pk

R
JC
[D + (1 ± D)

r(t
1
+ t
p) + r(tp) ± r(t1)]
r(t) = normalized value of transient thermal resistance at
time, t, from Figure 6, i.e.:
VF
TJ
= 25
°C
TFR
VFR
TJ
= 25
°C
TRR
IR
0.25 IR
IF
r(t1
+ t
p) = normalized value of transient thermal resistance
at time t1
+ t
p.
0
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