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| 型号： | TRA2525 |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/8页 |
| 文件大小： | 71K |
| 描述： | DIODE FAST REC 25A 250V BUTTON |
| 产品变化通告： | Product Discontinuation 02/Jan/2007 |
| 标准包装： | 5,000 |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 250V |
| 电流 - 平均整流 (Io)： | 25A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.18V @ 100A |
| 速度： | 标准恢复 >500ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 10µA @ 250V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | Microde 按钮 |
| 供应商设备封装： | Microde 按钮 |
| 包装： | 散装 |
TRA2525 MR3025
http://onsemi.com
5
Figure 10. Rectification Waveform Efficiency
f, FREQUENCY (kHz)
100
1
5
10
50
, EFFICIENCY FACTOR (%)
10
?
square wave input
sine wave input
TJ
= 25
°C
Figure 11. Single Phase Half±Wave Rectifier Circuit
RS
RL
VO
RECTIFICATION EFFICIENCY NOTE
The rectification efficiency factor ?
shown in Figure 10
was calculated using the formula:
P(dc)
P
(rms)
V2o(rms).100%
R
V2o(ac)
V2o(dc)
.100%
L
V2o(dc)
RL
V2o(dc)
(1)
For a sine wave input Vm sin(wt) to the diode, assume
lossless, the maximum theoretical efficiency factor
becomes:
(sine)
V2m
.100%
4
π2
.100%
40.6% (2)
V2m
2RL
4RL
For a square wave input of amplitude Vm, the efficiency
factor becomes:
R
(square)
L
V2m.100%
50% (3)
V2m
2
RL
(a full wave circuit has twice these efficiencies)
As the frequency of the input signal is increased, the
reverse recovery time of the diode (Figure 9) becomes
significant, resulting in an increase ac voltage component
across RL which is opposite in polarity to the forward
current, thereby reducing the value of the efficiency factor
?, as shown on Figure 10.
It should be emphasized that Figure 10 shows waveform
efficiency only; it does not provide a measure of diode
losses. Data was obtained by measuring the ac component of
VO
with a true rms ac voltmeter and the dc component with
a dc voltmeter. The data was used in Equation 1 to obtain
points for Figure 10.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TRA2525/D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Medium-Current Silicon Rectifiers |
| TRA2532 | 功能描述:TVS 二极管 - 瞬态电压抑制器 32A 24-32V Transient RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| TRA2532/D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Overvoltage Transient Suppresor |
| TRA25B103MGS | 功能描述:多层陶瓷电容器MLCC - 含引线 .010UF 50.0V RoHS:否 制造商:AVX 电容:470 pF 容差:10 % 电压额定值:3 kV 端接类型:Radial 工作温度范围: 温度系数/代码:X7R 引线间隔:5.08 mm 产品:Automotive MLCCs 引线类型: |
| TRA25D223KGS | 功能描述:多层陶瓷电容器MLCC - 含引线 .022UF 100V 10% HT RoHS:否 制造商:AVX 电容:470 pF 容差:10 % 电压额定值:3 kV 端接类型:Radial 工作温度范围: 温度系数/代码:X7R 引线间隔:5.08 mm 产品:Automotive MLCCs 引线类型: |
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