参数资料
| 型号： | TS80C51RD2-MCA |
| 厂商： | Atmel |
| 文件页数： | 71/84页 |
| 文件大小： | 0K |
| 描述： | IC MCU 8BIT 768BYTE 40MHZ 40-DIP |
| 标准包装： | 216 |
| 系列： | 80C |
| 核心处理器： | 8051 |
| 芯体尺寸： | 8-位 |
| 速度： | 40/20MHz |
| 连通性： | UART/USART |
| 外围设备： | POR，PWM，WDT |
| 输入/输出数： | 32 |
| 程序存储器类型： | ROMless |
| RAM 容量： | 768 x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 4.5 V ~ 5.5 V |
| 振荡器型： | 内部 |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 40-DIP（0.600"，15.24mm） |
| 包装： | 管件 |
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2007-2012 Microchip Technology Inc.
DS70292G-page 75
dsPIC33FJ32GP302/304, dsPIC33FJ64GPX02/X04, AND dsPIC33FJ128GPX02/X04
5.6.1
PROGRAMMING ALGORITHM FOR
FLASH PROGRAM MEMORY
Programmers can program one row of program Flash
memory at a time. To do this, it is necessary to erase
the 8-row erase page that contains the desired row.
The general process is:
1.
Read
eight
rows
of
program
memory
(512 instructions) and store in data RAM.
2.
Update the program data in RAM with the
desired new data.
3.
Erase the block (see Example 5-1):
a) Set the NVMOP bits (NVMCON<3:0>) to
‘0010’ to configure for block erase. Set the
ERASE (NVMCON<6>) and WREN
(NVMCON<14>) bits.
b) Write the starting address of the page to be
erased into the TBLPAG and W registers.
c)
Write 0x55 to NVMKEY.
d) Write 0xAA to NVMKEY.
e) Set the WR bit (NVMCON<15>). The erase
cycle begins and the CPU stalls for the dura-
tion of the erase cycle. When the erase is
done, the WR bit is cleared automatically.
4.
Write the first 64 instructions from data RAM into
the program memory buffers (see Example 5-2).
5.
Write the program block to Flash memory:
a) Set the NVMOP bits to ‘0001’ to configure
for row programming. Clear the ERASE bit
and set the WREN bit.
b) Write 0x55 to NVMKEY.
c)
Write 0xAA to NVMKEY.
d)
Set the WR bit. The programming cycle
begins and the CPU stalls for the duration of
the write cycle. When the write to Flash mem-
ory is done, the WR bit is cleared
automatically.
6.
Repeat steps 4 and 5, using the next available
64 instructions from the block in data RAM by
incrementing the value in TBLPAG, until all
512 instructions are written back to Flash memory.
For protection against accidental operations, the write
initiate sequence for NVMKEY must be used to allow
any erase or program operation to proceed. After the
programming command has been executed, the user
application must wait for the programming time until
programming is complete. The two instructions
following the start of the programming sequence
should be NOPs, as shown in Example 5-3.
EXAMPLE 5-1:
ERASING A PROGRAM MEMORY PAGE
; Set up NVMCON for block erase operation
MOV
#0x4042, W0
;
MOV
W0, NVMCON
; Initialize NVMCON
; Init pointer to row to be ERASED
MOV
#tblpage(PROG_ADDR), W0
;
MOV
W0, TBLPAG
; Initialize PM Page Boundary SFR
MOV
#tbloffset(PROG_ADDR), W0
; Initialize in-page EA[15:0] pointer
TBLWTL W0, [W0]
; Set base address of erase block
DISI
#5
; Block all interrupts with priority <7
; for next 5 instructions
MOV
#0x55, W0
MOV
W0, NVMKEY
; Write the 55 key
MOV
#0xAA, W1
;
MOV
W1, NVMKEY
; Write the AA key
BSET
NVMCON, #WR
; Start the erase sequence
NOP
; Insert two NOPs after the erase
NOP
; command is asserted
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相关代理商/技术参数 |
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|---|---|
| TS80C51RD2-MCAD | 制造商:未知厂家 制造商全称:未知厂家 功能描述:8-Bit Microcontroller |
| TS80C51RD2-MCB | 功能描述:IC MCU 8BIT 768BYTE 40MHZ 44PLCC RoHS:否 类别:集成电路 (IC) >> 嵌入式 - 微控制器， 系列:80C 标准包装:1,500 系列:AVR® ATtiny 核心处理器:AVR 芯体尺寸:8-位 速度:16MHz 连通性:I²C，LIN，SPI，UART/USART，USI 外围设备:欠压检测/复位，POR，PWM，温度传感器，WDT 输入/输出数:16 程序存储器容量:8KB（4K x 16） 程序存储器类型:闪存 EEPROM 大小:512 x 8 RAM 容量:512 x 8 电压 - 电源 (Vcc/Vdd):2.7 V ~ 5.5 V 数据转换器:A/D 11x10b 振荡器型:内部 工作温度:-40°C ~ 125°C 封装/外壳:20-SOIC（0.295"，7.50mm 宽） 包装:带卷 (TR) |
| TS80C51RD2-MCBB | 制造商:未知厂家 制造商全称:未知厂家 功能描述:8-Bit Microcontroller |
| TS80C51RD2-MCBD | 制造商:未知厂家 制造商全称:未知厂家 功能描述:8-Bit Microcontroller |
| TS80C51RD2-MCBR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:8-Bit Microcontroller |
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