参数资料
型号: TWL1103GQER
厂商: Texas Instruments
文件页数: 1/30页
文件大小: 0K
描述: VOICE BAND AUDIO PROC 80-BGA
标准包装: 1
系列: VBAP™
类型: 音频处理器
应用: 移动电话
安装类型: 表面贴装
封装/外壳: 80-VFBGA
供应商设备封装: 80-BGA MICROSTAR JUNIOR(5x5)
包装: 标准包装
其它名称: 296-11095-6
TWL1103
VOICE-BAND AUDIO PROCESSOR (VBAP
)
SLWS108A – JULY 2000 – JANUARY 2001
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
D 2.7-V Operation
D Two Differential Microphone Inputs, One
Differential Earphone Output, and One
Single-Ended Earphone Output
D Programmable Gain Amplifiers for
Transmit, Receive, Sidetone, and Volume
Control
D Earphone Mute and Microphone Mute
D On-Chip I2C Bus, Which Provides a Simple,
Standard, Two-Wire Serial Interface With
Digital ICs
D Programmable for 15-Bit Linear Data or
8-Bit Companded (
-Law or A-Law) Data
D Available in a 32-Pin Thin Quad Flatpack
(TQFP) Package and an 80-Pin GQE
MicroStar Junior
t Ball Grid Array (BGA)
D Designed for Analog and Digital Wireless
Handsets and Telecommunications
Applications
D Dual-Tone Multifrequency (DTMF) and
Single Tone Generator
D Pulse Density Modulated (PDM) Buzzer
Output
description
The voice-band audio processor (VBAP) is designed to perform transmit encoding analog/digital (A/D)
conversion, receive decoding digital/analog (D/A) conversion, and transmit and receive filtering for voice-band
communications systems. The device operates in either the 15-bit linear or 8-bit companded
(-law or A-Law)
mode, which is selectable through the I2C interface. The VBAP generates its own internal clocks from a
2.048-MHz master clock input.
PBS PACKAGE
(TOP VIEW)
31
30
29
28
27
9
10
PCMO
PCMI
DVSS
DVDD
SCL
SDA
NC
PLLVDD
EARVSS
EAR1ON
EARVDD
EAR1OP
EARVSS
EAR2O
AVDD
32
26
11
12
13
14
15
MBIAS
MIC1P
MIC1N
MIC2P
NC
16
25
1
2
3
45
67
8
24 23 22 21 20 19 18 17
MIC2N
REXT
AV
SS
MCLK
PLL
V
SS
V
SS
RESET
PWRUPSEL
BUZZCON
PCMSYN
PCMCLK
NC – No internal connection
This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These
circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C,
Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than maximum-rated
voltages to these high-impedance circuits. During storage or handling, the device leads should be shorted together or the device
should be placed in conductive foam. In a circuit, unused inputs should always be connected to an appropriated logic voltage level,
preferably either VCC or ground. Specific guidelines for handling devices of this type are contained in the publication Guidelines for
Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
Copyright
2001, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
MicroStar Junior and VBAP are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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