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| 型号： | TWR-MCF51JE-KIT |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 10/47页 |
| 文件大小： | 0K |
| 描述： | TOWER SYSTEM KIT MCF51JE |
| 标准包装： | 1 |
| 系列： | ColdFire®, Flexis™ |
| 类型： | MCU |
| 适用于相关产品： | Freescale 电源塔系统，MCF51JE |
| 所含物品： | 4 个板，线缆，文档，DVD |
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MCF51JE256 Datasheet, Rev. 4
Preliminary Electrical Characteristics
Freescale Semiconductor
18
where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring
PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by
3.4
ESD Protection Characteristics
Although damage from static discharge is much less common on these devices than on early CMOS
circuits, normal handling precautions should be used to avoid exposure to static discharge. Qualification
tests are performed to ensure that these devices can withstand exposure to reasonable levels of static
without suffering any permanent damage.
All ESD testing is in conformity with CDF-AEC-Q00 Stress Test Qualification for Automotive Grade
Integrated Circuits. (http://www.aecouncil.com/) This device was qualified to AEC-Q100 Rev E.
A device is considered to have failed if, after exposure to ESD pulses, the device no longer meets the
device specification requirements. Complete dc parametric and functional testing is performed per the
applicable device specification at room temperature followed by hot temperature, unless specified
otherwise in the device specification.
3.5
DC Characteristics
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
Table 7. ESD and Latch-up Test Conditions
Model
Description
Symbol
Value
Unit
Human Body
Series Resistance
R1
1500
Storage Capacitance
C
100
pF
Number of Pulse per pin
—
3
—
Machine
Series Resistance
R1
0
Storage Capacitance
C
200
pF
Number of Pulse per pin
—
3
—
Latch-up
Minimum input voltage limit
—
–2.5
V
Maximum input voltage limit
—
7.5
V
Table 8. ESD and Latch-Up Protection Characteristics
#
Rating
Symbol
Minimum
Maximum
Unit
C
1
Human Body Model (HBM)
VHBM
2000
—
V
T
2
Machine Model (MM)
VMM
200
—
V
T
3
Charge Device Model (CDM)
VCDM
500
—
V
T
4
Latch-up Current at TA = 125CILAT
00
—
mA
T
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TWR-MCF51JF | 功能描述:开发板和工具包 - COLDFIRE MCF51QM Tower Module RoHS:否 制造商:Freescale Semiconductor 产品:Development Kits 工具用于评估:MCF53017 核心:ColdFire V3 接口类型:Ethernet, UART, USB 工作电源电压:12 V |
| TWR-MCF51JF-KIT | 功能描述:开发板和工具包 - COLDFIRE MCF51JF Tower Kit RoHS:否 制造商:Freescale Semiconductor 产品:Development Kits 工具用于评估:MCF53017 核心:ColdFire V3 接口类型:Ethernet, UART, USB 工作电源电压:12 V |
| TWR-MCF51JG | 制造商:Freescale Semiconductor 功能描述:TWR-MCF51JG - Boxed Product (Development Kits) 制造商:Freescale Semiconductor 功能描述:MOD TOWER SYSTEM MCF51JX |
| TWR-MCF51MM | 功能描述:开发板和工具包 - COLDFIRE MCU BRD FOR FSL TWR RoHS:否 制造商:Freescale Semiconductor 产品:Development Kits 工具用于评估:MCF53017 核心:ColdFire V3 接口类型:Ethernet, UART, USB 工作电源电压:12 V |
| TWR-MCF51MM-KIT | 功能描述:开发板和工具包 - COLDFIRE KIT MCU BD FSL TOWER RoHS:否 制造商:Freescale Semiconductor 产品:Development Kits 工具用于评估:MCF53017 核心:ColdFire V3 接口类型:Ethernet, UART, USB 工作电源电压:12 V |
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