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参数资料
| 型号： | UBA2014T/N1,518 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 12/19页 |
| 文件大小： | 0K |
| 描述： | IC CNTL BALLAST 600V 16-SOIC |
| 标准包装： | 1 |
| 类型： | 镇流器控制器 |
| 频率： | 40.5 ~ 100 kHz |
| 电流 - 电源： | 1.5mA |
| 电流 - 输出： | 330mA |
| 电源电压： | 9.1 V ~ 13 V |
| 工作温度： | -25°C ~ 80°C |
| 封装/外壳： | 16-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 16-SO |
| 包装： | 标准包装 |
| 产品目录页面： | 844 (CN2011-ZH PDF) |
| 其它名称： | 568-3322-6 |
NXP Semiconductors
UBA2014
600 V driver IV for HF ?uorescent lamps
Table 6. Characteristics …continued
V DD = 13 V; V FVDD ? V SH = 13 V; T amb = 25 ° C; all voltages referenced to GND; see test circuit of Figure 8 ; unless otherwise
speci?ed.
Symbol
I o(start)
Parameter
oscillator output start current
Conditions
V CF = 1.5 V
Min
3.8
Typ
4.5
Max
5.2
Unit
μ A
I o(min)
minimum oscillator output current V CF = 1.5 V
-
21
-
μ A
I o(max)
maximum oscillator output
V CF = 1.5 V
-
54
-
μ A
current
Output drivers
High-side driver output: pin GH
V OH
V OL
I o(source)
I o(sink)
R on
R off
HIGH-level output voltage
LOW-level output voltage
output source current
output sink current
on resistance
off resistance
I o = 10 mA
I o = 10 mA
V GH ? V SH = 0 V
V GH ? V SH = 13 V
I o = 10 mA
I o = 10 mA
12.5
-
135
265
32
16
-
-
180
330
39
21
-
0.5
235
415
45
26
V
V
mA
mA
?
?
Low-side driver output: pin GL
V OH
V OL
I o(source)
I o(sink)
R on
R off
HIGH-level output voltage
LOW-level output voltage
output source current
output sink current
on resistance
off resistance
I o = 10 mA
I o = 10 mA
V GL = 0
V GL = 13 V
I o = 10 mA
I o = 10 mA
12.5
-
135
265
32
16
-
-
200
330
39
21
-
0.5
235
415
45
26
V
V
mA
mA
?
?
Floating supply voltage: pin FV DD
V FVDD
lockout voltage
2.8
3.5
4.2
V
I FVDD
?oating well supply current
DC level at
V GH ? V SH = 13 V
-
35
-
μ A
Bootstrap diode
V boot
bootstrap diode forward drop
I = 5 mA
1.3
1.7
2.1
V
voltage
Preheat current sensor
Input: pin PCS
I i
V ph
input current
preheat voltage
V PCS = 0.6 V
-
0.57
-
0.60
1
0.63
μ A
V
Output: pin CSW
I o(source)
I o(sink)
output source current
output sink current
V CSW = 2.0 V
V CSW = 2.0 V
9.0
-
10
10
11
-
μ A
μ A
Adaptive non-overlap and capacitive mode detection; pin ACM
I i
V CMDP
input current
positive capacitive mode
V ACM = 0.6 V
-
80
-
100
1
120
μ A
mV
detection voltage
V CMDN
negative capacitive mode
? 68
? 85
? 102
mV
detection voltage
UBA2014_4
? NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 16 October 2008
12 of 19
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