参数资料
型号: UBA2014T/N1,518
厂商: NXP Semiconductors
文件页数: 13/19页
文件大小: 0K
描述: IC CNTL BALLAST 600V 16-SOIC
标准包装: 1
类型: 镇流器控制器
频率: 40.5 ~ 100 kHz
电流 - 电源: 1.5mA
电流 - 输出: 330mA
电源电压: 9.1 V ~ 13 V
工作温度: -25°C ~ 80°C
封装/外壳: 16-SOIC(0.154",3.90mm 宽)
供应商设备封装: 16-SO
包装: 标准包装
产品目录页面: 844 (CN2011-ZH PDF)
其它名称: 568-3322-6
NXP Semiconductors
UBA2014
600 V driver IV for HF ?uorescent lamps
Table 6. Characteristics …continued
V DD = 13 V; V FVDD ? V SH = 13 V; T amb = 25 ° C; all voltages referenced to GND; see test circuit of Figure 8 ; unless otherwise
speci?ed.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Lamp voltage sensor
Input: pin LVS
I i
V lamp(fail)
input current
lamp fail voltage
V LVS = 0.81 V
-
0.77
-
0.81
1
0.85
μ A
V
V lamp(fail)(hys) lamp fail hysteresis voltage
119
144
169
mV
V lamp(max)
maximum lamp voltage
1.44
1.49
1.54
V
Output: pin CT
I o(sink)
I o(source)
output sink current
ignition output source current
V CSW = 2.0 V
V CSW = 2.0 V
27
9.0
30
10
33
11
μ A
μ A
Average current sensor
Input: pins CSP and CSN
I i
V offset
g m
input current
offset voltage
transconductance
V CS = 0 V
V CSP = V CSN = 0 V to 2.5 V
f = 1 kHz
-
? 2
1900
-
0
3800
1
+2
5700
μ A
mV
μ A/mV
Output: pin CSW
I o
output current
source and sink; V CSW = 2 V
85
95
105
μ A
Preheat timer; pin CT
t ph
t ign
I o
V OL
V OH
V hys
preheat time
ignition time
output current
LOW-level output voltage
HIGH-level output voltage
hysteresis voltage
C CT = 330 nF;
R IREF = 33 k ?
C CT = 330 nF;
R IREF = 33 k ?
V CT = 2.5 V
1.6
-
5.5
-
-
2.05
1.8
0.32
5.9
1.4
3.6
2.20
2.0
-
6.3
-
-
2.35
s
s
μ A
V
V
V
[1]
The maximum non-overlap time is determined by the level of the CF signal. If this signal exceeds a level of 1.25 V, the non-overlap will
end, resulting in a maximum non-overlap time of 7.5 μ s at a bridge frequency of 40 kHz.
UBA2014_4
? NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 16 October 2008
13 of 19
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