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参数资料
| 型号： | UBA2033TS/N2,118 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 8/18页 |
| 文件大小： | 0K |
| 描述： | IC FULL BRIDGE DRIVER 28-SSOP |
| 标准包装： | 1 |
| 配置： | 半桥 |
| 输入类型： | 自振荡 |
| 电流 - 峰： | 130mA |
| 配置数： | 1 |
| 输出数： | 4 |
| 高端电压 - 最大（自引导启动）： | 550V |
| 电源电压： | 10.5 V ~ 13.5 V |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 28-SSOP（0.209"，5.30mm 宽） |
| 供应商设备封装： | 28-SSOP |
| 包装： | 标准包装 |
| 产品目录页面： | 844 (CN2011-ZH PDF) |
| 其它名称： | 568-3326-6 |
NXP Semiconductors
HF full bridge driver IC
THERMAL CHARACTERISTICS
Product specification
UBA2033
SYMBOL
R th(j-a)
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air
VALUE
100
UNIT
K/W
QUALITY SPECIFICATION
In accordance with “SNW-FQ-611D” .
CHARACTERISTICS
T j = 25 ° C; all voltages are measured with respect to SGND; positive currents flow into the IC; unless otherwise
specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
High voltage
I HV
I FSL , I FSR
high voltage supply current
high voltage floating supply
t < 0.5 s and V HV = 550 V
t < 0.5 s and V FSL = V FSR = 564 V
0
0
?
?
30
30
μ A
μ A
current
Start-up; powered via pin HV
I i(HV)
V HV(rel)
HV input current
level of release power drive
V HV = 11 V; note 1
?
11
0.5
12.5
1.0
14
mA
V
voltage
V HV(UVLO)
V HV(hys)
reset level of power drive voltage
HV hysteresis voltage
8.5
2.0
10
2.5
11.5
3.0
V
V
V DD
internal supply voltage
V HV = 20 V
10.5
11.5
13.5
V
Start-up; powered via pin V DD
I i(DD)
V DD(rel)
V DD input current
level of release power drive
V DD = 8.25 V; note 2
?
8.25
0.5
9.0
1.0
9.75
mA
V
voltage
V DD(UVLO)
V DD(hys)
reset level of power drive voltage
hysteresis voltage
5.75
2.0
6.5
2.5
7.25
3.0
V
V
Output stage
R on(H)
higher MOSFETs on resistance
V FSR = V FSL = 12 V (with respect
15
21
26
Ω
to SHR and SHL); I source = 50 mA
R off(H)
higher MOSFETs off resistance
V FSR = V FSL = 12 V (with respect
9
14
18
Ω
to SHR and SHL); I sink = 50 mA
R on(L)
R off(L)
I o(source)
lower MOSFETs on resistance
lower MOSFETs off resistance
output source current
V DD = 12 V; I source = 50 mA
V DD = 12 V; I sink = 50 mA
V DD = V FSL = V FSR = 12 V;
15
9
130
21
14
180
26
18
?
Ω
Ω
mA
V GHR = V GHL = V GLR = V GLL = 0 V
I o(sink)
output sink current
V DD = V FSL = V FSR = 12 V;
150
200
?
mA
V GHR = V GHL = V GLR = V GLL = 12 V
V diode
t no
V FSL
bootstrap diode voltage drop
non-overlap time
HS lockout voltage left
I diode = 20 mA
1.7
?
3.0
2.1
?
4.0
2.5
250
5.0
V
ns
V
2002 Oct 08
8
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