参数资料
| 型号： | UBA2070T/N1,518 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 9/20页 |
| 文件大小： | 0K |
| 描述： | IC CCFL DRIVER 16-SOIC |
| 标准包装： | 1 |
| 类型： | CCFL 驱动器 |
| 频率： | 40.5 ~ 100 kHz |
| 电流 - 电源： | 1.5mA |
| 电流 - 输出： | 300mA |
| 电源电压： | 6V |
| 工作温度： | -25°C ~ 80°C |
| 封装/外壳： | 16-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 16-SO |
| 包装： | 标准包装 |
| 其它名称： | 568-4418-6 |
Philips Semiconductors
600 V CCFL ballast driver IC
Power-down state
The Power-down state will be entered if, at the end of the
ignition time, the voltage at pin LVS is above V LVS(fail) .
In the Power-down state the oscillation will be stopped and
MOSFETs T hs and T ls will be non-conductive. The V DD
supply is internally clamped. The circuit is released from
the Power-down state by reducing the supply voltage to
below V DD(reset) .
Capacitive mode protection
The signal across R ACM also gives information about the
switching behaviour of the half bridge. If the voltage at
Product speci?cation
UBA2070
Charge coupling
Due to parasitic capacitive coupling to the high voltage
circuitry all pins are charged with a repetitive charge
injection. Given the typical application the pins
I REF and CF are sensitive to this charge injection. For
charge coupling of ± 8 pC, a safe functional operation of
the IC is guaranteed, independent of the current level.
Charge coupling at current levels below 50 μ A will not
interfere with the accuracy of the V CS and V ACM levels.
Charge coupling at current levels below 20 μ A will not
interfere with the accuracy of any parameter.
R ACM does not exceed the V CMD level during the
non-overlap time (see Fig.4), the Capacitive Mode
Detection (CMD) circuit assumes that the circuit is in
capacitive mode of operation. Consequently the frequency
will be directly increased to f max . In this event the
frequency behaviour is decoupled from the voltage at
pin CSW until the voltage is discharged to zero. An internal
filter of 30 ns is included at pin ACM to increase the noise
immunity.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); all voltages referenced to ground.
SYMBOL
V hs
V ACM
V LVS
V CS+
V CS ?
V CSW
T amb
T j
T stg
PARAMETER
high side supply voltage
voltage on pin ACM
voltage on pin LVS
voltage on pin CS+
voltage on pin CS ?
voltage on pin CSW
ambient temperature
junction temperature
storage temperature
CONDITION
I hs < 30 μ A; t < 1 s
I hs < 30 μ A
MIN.
?
?
? 5
0
0
? 0.3
0
? 25
? 25
? 55
MAX.
600
510
+5
5
5
+5
5
+80
+150
+150
UNIT
V
V
V
V
V
V
V
° C
° C
° C
V esd
electrostatic discharge voltage
note 1
pins FV DD , GH, SH and V DD
pins GL, ACM, CS+, CS ? , CSW,
? 1000
? 2500
+1000
+ 2500
V
V
LVS, CF, I REF , CT and V REF
Note
1. In accordance with the human body model: equivalent to discharging a 100 pF capacitor through a 1.5 k ? series
resistor.
2002 Oct 24
9
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