参数资料
| 型号： | UESD3.3DT5G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | DIODE ESD PROTECT 3.3V SOT-723 |
| 产品变化通告： | Specification Update Max Forward Voltage 18/Jan/2008 Copper Wire Change 19/May/2010 |
| 标准包装： | 1 |
| 系列： | uESD |
| 电压 - 反向隔离（标准值）： | 3.3V |
| 电压 - 击穿： | 5V |
| 电极标记： | 2 通道阵列 - 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-723 |
| 供应商设备封装： | SOT-723 |
| 包装： | 标准包装 |
| 其它名称： | UESD3.3DT5GOSDKR |
m ESD3.3DT5G SERIES
ESD Protection Diodes
In Ultra Small SOT ? 723 Package
The m ESD Series is designed to protect voltage sensitive components
from ESD. Excellent clamping capability, low leakage, and fast response
time, make these parts ideal for ESD protection on designs where board
space is at a premium. Because of its small size, it is suited for use in
cellular phones, portable devices, digital cameras, power supplies and
http://onsemi.com
many other portable applications.
Specification Features:
? Small Body Outline Dimensions:
0.047 ″ x 0.032 ″ (1.20 mm x 0.80 mm)
? Low Body Height: 0.020 ″ (0.5 mm)
? Stand ? off Voltage: 3.3 V ? 6.0 V
? Low Leakage
? Response Time is Typically < 1 ns
? ESD Rating of Class 3 (> 16 kV) per Human Body Model
? IEC61000 ? 4 ? 2 Level 4 ESD Protection
? IEC61000 ? 4 ? 4 Level 4 EFT Protection
? AEC ? Q101 Qualified and PPAP Capable
? These are Pb ? Free Devices
PIN 1. CATHODE
2. CATHODE
3. ANODE
3
2
1
SOT ? 723
CASE 631AA
STYLE 4
1
2
xx
M
MARKING
DIAGRAM
xx M
= Device Code
= Date Code
3
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
Epoxy Meets UL 94 V ? 0
LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any
QUALIFIED MAX REFLOW TEMPERATURE: 260 ° C
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
ORDERING INFORMATION
Device Package Shipping ?
UESDxxDT5G SOT ? 723 8000/Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Rating
Symbol
Value
Unit
IEC 61000 ? 4 ? 2 (ESD)
Air
Contact
± 30
± 30
kV
DEVICE MARKING INFORMATION
IEC 61000 ? 4 ? 4 (EFT)
ESD Voltage Per Human Body Model
Per Machine Model
40
16
400
A
kV
V
See specific marking information in the device marking
column of the table on page 2 of this data sheet.
Total Power Dissipation on FR ? 5 Board
(Note 1) @ T A = 25 ° C
Derate above 25 ° C
Thermal Resistance Junction ? to ? Ambient
Junction and Storage Temperature Range
Lead Solder Temperature ? Maximum
(10 Second Duration)
?
P D
R q JA
T J , T stg
T L
240
1.9
525
? 55 to
+150
260
mW
mW/ ° C
° C/W
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR ? 5 = 1.0 x 0.75 x 0.62 in.
? Semiconductor Components Industries, LLC, 2013
January, 2013 ? Rev. 4
1
Publication Order Number:
UESD3.3DT5G/D
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| UESD5.0DT5G | 功能描述:TVS 二极管 - 瞬态电压抑制器 ZEN ESD PROTECT RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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| UESD6.0DT5G | 功能描述:TVS 二极管 - 瞬态电压抑制器 ZEN ESD PROTECT RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| UESDXXDT5G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:ESD Protection Diodes |
| UESP04D | 制造商:GULFSEMI 制造商全称:Gulf Semiconductor 功能描述:Ultra fast Plastic Power Rectifiers VOLTAGE: 200V CURRENT: 4.0A |
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